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Novel benzo[c][1,2,5]oxadiazole-naphthalenediimide based copolymer for high-performance air-stable n-type field-effect transistors exhibiting high electron mobility of 2.43 cm2 V−1 s−1 †
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2017-02-20 00:00:00 , DOI: 10.1039/c6tc05659h Zhiyuan Zhao 1, 2, 3, 4, 5 , Zhihong Yin 4, 6, 7, 8 , Huajie Chen 4, 6, 7, 8 , Yunlong Guo 4, 5, 9, 10 , Qinxin Tang 1, 2, 3, 4 , Yunqi Liu 4, 5, 9, 10
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2017-02-20 00:00:00 , DOI: 10.1039/c6tc05659h Zhiyuan Zhao 1, 2, 3, 4, 5 , Zhihong Yin 4, 6, 7, 8 , Huajie Chen 4, 6, 7, 8 , Yunlong Guo 4, 5, 9, 10 , Qinxin Tang 1, 2, 3, 4 , Yunqi Liu 4, 5, 9, 10
Affiliation
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A strongly electron-withdrawing benzo[c][1,2,5]oxadiazole (BOZ) unit, as the second electron acceptor segment, is incorporated into the naphthalenediimide (NDI) based polymer backbone for the first time. Therefore, a unipolar n-type polymer semiconductor (PNBO) with a regioregular A1–D–A2–D configuration is developed successfully. It is found that BOZ-containing polymer PNBO not only has a deep-lying LUMO energy level of ca. −4.0 eV, which facilitates electron-injection from an Au electrode into the active layer, but also possesses a deep enough low HOMO energy level of −5.9 eV for blocking hole-injection. The carrier transporting performance of PNBO is characterized by solution-processable polymeric field-effect transistors (PFETs). These results demonstrate that a smooth surface morphology and a compact solid stacking endow PNBO with excellent unipolar n-type electron-transporting characteristics; a highest electron mobility of up to 2.43 cm2 V−1 and an excellent shelf storage with a negligible decay in 70 days are achieved.
中文翻译：
新型苯并[ c ] [1,2,5]恶二唑-萘二酰亚胺基共聚物，用于高性能空气稳定的n型场效应晶体管，具有2.43 cm 2 V -1 s -1 †的高电子迁移率
作为第二电子受体链段的强吸电子苯并[ c ] [1,2,5]恶二唑（BOZ）单元首次并入基于萘二甲酰亚胺（NDI）的聚合物主链中。因此，成功开发了具有区域规则的A1-D-A2-D结构的单极n型聚合物半导体（PNBO）。发现含BOZ的聚合物PNBO不仅具有大约ca的深层LUMO能级。-4.0 eV，有助于将电子从Au电极注入到有源层中，但还具有-5.9 eV的足够低的HOMO能级，足以阻止空穴注入。PNBO的载运性能其特征在于可溶液处理的聚合物场效应晶体管（PFET）。这些结果表明，光滑的表面形态和紧凑的固体堆积赋予了PNBO优异的单极n型电子传输特性。实现了高达2.43 cm 2 V -1的最高电子迁移率和出色的货架存储能力，在70天内的衰减可忽略不计。
更新日期：2017-02-20
中文翻译：
新型苯并[ c ] [1,2,5]恶二唑-萘二酰亚胺基共聚物，用于高性能空气稳定的n型场效应晶体管，具有2.43 cm 2 V -1 s -1 †的高电子迁移率
作为第二电子受体链段的强吸电子苯并[ c ] [1,2,5]恶二唑（BOZ）单元首次并入基于萘二甲酰亚胺（NDI）的聚合物主链中。因此，成功开发了具有区域规则的A1-D-A2-D结构的单极n型聚合物半导体（PNBO）。发现含BOZ的聚合物PNBO不仅具有大约ca的深层LUMO能级。-4.0 eV，有助于将电子从Au电极注入到有源层中，但还具有-5.9 eV的足够低的HOMO能级，足以阻止空穴注入。PNBO的载运性能其特征在于可溶液处理的聚合物场效应晶体管（PFET）。这些结果表明，光滑的表面形态和紧凑的固体堆积赋予了PNBO优异的单极n型电子传输特性。实现了高达2.43 cm 2 V -1的最高电子迁移率和出色的货架存储能力，在70天内的衰减可忽略不计。
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