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Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2017-02-13 00:00:00 , DOI: 10.1021/acs.jpclett.7b00133 Bo Han 1 , Fangfei Li 1 , Liang Li 1 , Xiaoli Huang 1 , Yuanbo Gong 1 , Xinpeng Fu 1 , Hanxue Gao 1 , Qiang Zhou 1 , Tian Cui 1
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2017-02-13 00:00:00 , DOI: 10.1021/acs.jpclett.7b00133 Bo Han 1 , Fangfei Li 1 , Liang Li 1 , Xiaoli Huang 1 , Yuanbo Gong 1 , Xinpeng Fu 1 , Hanxue Gao 1 , Qiang Zhou 1 , Tian Cui 1
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Transition-metal dichalcogenides (TMDs) are promising materials for optoelectronic devices. Their lattice and electronic structural evolutions under high strain conditions and their relations remain open questions. We exert pressure on WS2 monolayers on different substrates, namely, Si/SiO2 substrate and diamond anvil surface up to ∼25 GPa. Structural distortions in various degree are disclosed based on the emergence of Raman-inactive B mode. Splits of out-of-plane B and A1′ modes are only observed on Si/SiO2 substrate due to extra strain imported from volume decrease in Si and corrugation of SiO2 surface, and its photoluminescence (PL) quenches quickly because of decreased K–K transition by conspicuous distortion of Brillouin zone. While diamond anvil surface provides better hydrostatic environment, combined analysis of PL and absorption proves that pressure effectively tunes PL emission energy and enhances Coulomb interactions. Knowledge of these distinct pressure tunable characteristics of monolayer WS2 improves further understanding of structural and optical properties of TMDs.
中文翻译：
压缩单层二硫化钨的相依晶格和电子结构演化
过渡金属二硫化碳（TMDs）是光电子器件的有前途的材料。它们在高应变条件下的晶格和电子结构演化及其关系仍然是悬而未决的问题。我们在高达25 GPa的不同衬底上的WS 2单层上施加压力，这些WS 2单层包括Si / SiO 2衬底和金刚石砧表面。基于拉曼非活性B模的出现，公开了各种程度的结构变形。由于从Si的体积减小和SiO 2的波纹化而引入的额外应变，仅在Si / SiO 2衬底上观察到了面外B和A 1 '模式的分裂。表面，其光致发光（PL）迅速淬灭，这是由于布里渊区的明显变形导致K–K过渡减少所致。虽然金刚石砧座表面提供了更好的静水环境，但对PL和吸收的综合分析证明压力有效地调节了PL的发射能量并增强了库仑相互作用。对单层WS 2的这些独特的压力可调特性的了解有助于进一步了解TMD的结构和光学特性。
更新日期：2017-02-13
中文翻译：
压缩单层二硫化钨的相依晶格和电子结构演化
过渡金属二硫化碳（TMDs）是光电子器件的有前途的材料。它们在高应变条件下的晶格和电子结构演化及其关系仍然是悬而未决的问题。我们在高达25 GPa的不同衬底上的WS 2单层上施加压力，这些WS 2单层包括Si / SiO 2衬底和金刚石砧表面。基于拉曼非活性B模的出现，公开了各种程度的结构变形。由于从Si的体积减小和SiO 2的波纹化而引入的额外应变，仅在Si / SiO 2衬底上观察到了面外B和A 1 '模式的分裂。表面，其光致发光（PL）迅速淬灭，这是由于布里渊区的明显变形导致K–K过渡减少所致。虽然金刚石砧座表面提供了更好的静水环境，但对PL和吸收的综合分析证明压力有效地调节了PL的发射能量并增强了库仑相互作用。对单层WS 2的这些独特的压力可调特性的了解有助于进一步了解TMD的结构和光学特性。
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