Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

中文翻译：

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柔性铟镓锌氧化物肖特基二极管，工作频率超过2.45 GHz。

由于薄膜电子在过去的几十年中的快速发展，人们一直期待着机械灵活的移动电话。然而，迄今为止，尚未开发出这种电话，这主要是由于缺乏足够灵活的电子组件，这些组件对于所需的无线通信，尤其是对速度要求很高的前端整流器，足够快。在此，基于非晶铟镓锌氧化物（IGZO）的肖特基二极管被制造在柔性塑料基板上。使用合适的射频台面结构，已经研究了IGZO厚度和二极管尺寸的范围。结果表明，二极管速度对IGZO厚度的出乎意料的依赖性。研究结果使最佳优化的柔性二极管能够在零偏置时达到6.3 GHz，这超出了2的临界基准速度。