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Alloying Strategy in Cu–In–Ga–Se Quantum Dots for High Efficiency Quantum Dot Sensitized Solar Cells
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-01-31 00:00:00 , DOI: 10.1021/acsami.6b14649
Wenxiang Peng 1 , Jun Du 1 , Zhenxiao Pan 1 , Naoki Nakazawa 2 , Jiankun Sun 3 , Zhonglin Du 1 , Gencai Shen 1 , Juan Yu 1 , Jin-Song Hu 3 , Qing Shen 2, 4 , Xinhua Zhong 1, 5
Affiliation  

I–III–VI2 group “green” quantum dots (QDs) are attracting increasing attention in photoelectronic conversion applications. Herein, on the basis of the “simultaneous nucleation and growth” approach, Cu–In–Ga–Se (CIGSe) QDs with light harvesting range of about 1000 nm were synthesized and used as sensitizer to construct quantum dot sensitized solar cells (QDSCs). Inductively coupled plasma atomic emission spectrometry (ICP-AES), wild-angle X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analyses demonstrate that the Ga element was alloyed in the Cu–In–Se (CISe) host. Ultraviolet photoelectron spectroscopy (UPS) and femtosecond (fs) resolution transient absorption (TA) measurement results indicate that the alloying strategy could optimize the electronic structure in the obtained CIGSe QD material, thus matching well with TiO2 substrate and favoring the photogenerated electron extraction. Open circuit voltage decay (OCVD) and impedance spectroscopy (IS) tests indicate that the intrinsic recombination in CIGSe QDSCs was well suppressed relative to that in CISe QDSCs. As a result, CIGSe based QDSCs with use of titanium mesh supported mesoporous carbon counter electrode exhibited a champion efficiency of 11.49% (Jsc = 25.01 mA/cm2, Voc = 0.740 V, FF = 0.621) under the irradiation of full one sun in comparison with 9.46% for CISe QDSCs.

中文翻译:

Cu-In-Ga-Se量子点中用于高效量子点敏化太阳能电池的合金化策略

I–III–VI 2在光电转换应用中,“绿色”量子点组(QD)引起了越来越多的关注。在此,基于“同时成核和生长”的方法,合成了光收集范围约为1000 nm的Cu-In-Ga-Se(CIGSe)QD,并将其用作敏化剂来构建量子点敏化太阳能电池(QDSC) 。电感耦合等离子体原子发射光谱法(ICP-AES),野角X射线衍射(XRD)和X射线光电子能谱(XPS)分析表明,Ga元素在Cu-In-Se(CISe)中合金化了主持人。紫外光电子能谱(UPS)和飞秒(fs)分辨率瞬态吸收(TA)测量结果表明,合金化策略可以优化所得CIGSe QD材料的电子结构,从而与TiO很好地匹配2衬底和有利于光生电子的提取。开路电压衰减(OCVD)和阻抗谱(IS)测试表明,相对于CISe QDSC,CIGSe QDSC中的固有重组得到了很好的抑制。结果,使用钛网支撑的介孔碳对电极的基于CIGSe的QDSC在全辐照下表现出11.49%的最佳效率(J sc = 25.01 mA / cm 2V oc = 0.740 V,FF = 0.621)。太阳与CISe QDSC的9.46%相比。
更新日期:2017-01-31
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