Nanowire-based ferroelectric-complementary metal–oxide–semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10⁵ times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

中文翻译：

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基于P（VDF-TrFE）铁电栅CMOS硅纳米线沟道场效应晶体管的超低功耗非易失性存储单元†

通过使用单个n型和p型Si纳米线铁电栅场效应晶体管（NW FeFET）作为单独的存储单元，成功地制造了基于纳米线的铁电互补金属氧化物半导体（NW FeCMOS）非易失性存储器件。除了具有单通道n型和p型Si NW FeFET存储器的优点外，Si NW FeCMOS存储器件还具有直接读出电压和超低功耗的特性。该设备的读取状态功耗小于0.1 pW，大于10 ⁵比单通道铁电存储器的导通状态功耗低两倍。该结果表明，Si NW FeCMOS存储器件非常适合用于现代便携式电子设备中的非易失性存储芯片，特别是在低功耗对于节能和长期使用至关重要的情况下。