The promise of aromatic, amorphous, polar polymers containing high dipolar moments with very low defect levels is demonstrated for future dielectric materials with ultrahigh electric‐energy density, low loss at high applied fields, and ultrahigh breakdown strengths. Specifically, aromatic polythiourea films exhibit an ultrahigh breakdown field (>1 GV m⁻¹), which results in an energy density of ≈22 J cm⁻³, as well as a low loss.

中文翻译：

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具有超高击穿场强，低介电损耗和高电能密度的芳族聚硫脲介电材料

未来的介电材料具有超高的电能密度，高应用领域的低损耗和超高的击穿强度，证明了含有高偶极矩且缺陷水平非常低的芳族，非晶态，极性聚合物的前景。具体地，芳族聚硫脲膜表现出超高的击穿场（> 1 GV m ^-1），这导致≈22J c​​m ^-3的能量密度以及低损耗。