Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy,Nano Letters

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Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy
Nano Letters ( IF 9.6 ) Pub Date : 2017-01-23 00:00:00 , DOI: 10.1021/acs.nanolett.6b03855
Zefang Wang ₁ , Liang Zhao ₂ , Kin Fai Mak ₁ , Jie Shan _{1,

2}

Affiliation

We study the electronic band structure in the K/K′ valleys of the Brillouin zone of monolayer WSe₂ and MoSe₂ by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct spin polarization in the conduction bands of these compounds by a systematic study of the doping dependence of the A and B excitonic resonances. Electrons in the highest-energy valence band and the lowest-energy conduction band have antiparallel spins in monolayer WSe₂ and parallel spins in monolayer MoSe₂. The spin splitting is determined to be hundreds of meV for the valence bands and tens of meV for the conduction bands, which are in good agreement with first-principles calculations. These values also suggest that both n- and p-type WSe₂ and MoSe₂ can be relevant for spin- and valley-based applications.

中文翻译：

用光谱法研究单层过渡金属二硫属化物中的自旋极化电子能带结构

我们通过双门场效应器件的光反射和光致发光光谱研究了单层WSe ₂和MoSe ₂的布里渊区K / K'谷中的电子能带结构。我们的实验通过对A和B激子共振的掺杂依赖性进行系统研究，揭示了这些化合物的导带中明显的自旋极化。在最高能量价带和最低能量导带电子在单层反平行自旋WSE ₂单层摩西和平行自旋₂。对于价带，自旋分裂被确定为数百meV，对于导带，自旋分裂被确定为数十meV，这与第一性原理计算非常吻合。这些值还表明，n型和p型WSe ₂和MoSe ₂与基于自旋和谷值的应用有关。

更新日期：2017-01-23

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