Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few‐Layer Bi2Te3/Sb2Te3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice‐Mismatch with Seed Substrates,Advanced Electronic Materials

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Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few‐Layer Bi2Te3/Sb2Te3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice‐Mismatch with Seed Substrates
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-01-20 , DOI: 10.1002/aelm.201600375
Hoseok Heo _{1,

2} , Ji Ho Sung _{1,

2} , Ji-Hoon Ahn ₁ , Fereshte Ghahari ₃ , Takashi Taniguchi ₄ , Kenji Watanabe ₄ , Philip Kim ₃ , Moon-Ho Jo _{1,

5}

Affiliation

Different growth mechanisms of van der Waals heteroepitaxial 2D Bi₂Te₃/Sb₂Te₃ stacking by choosing different substrates are reported. Sequential Bi₂Te₃/Sb₂Te₃ stacking growth mode becomes layer‐by‐layer growth on h‐BN substrates, and 3D island growth on SiO₂/Si. Compressive strain in the h‐BN substrates imposed by the lattice mismatch plays a crucial role to determine different growth modes in these 2D nucleation kinetics models.

中文翻译：

范德华异质外延法连续堆叠很少层的Bi2Te3 / Sb2Te3时，Frank–van der Merwe增长与Volmer–Weber增长的关系：有限晶格与种子基质不匹配的关键作用

通过选择不同的衬底，报道了范德华异质外延2D Bi ₂ Te ₃ / Sb ₂ Te ₃堆叠的不同生长机理。依次的Bi ₂ Te ₃ / Sb ₂ Te ₃堆叠生长模式在h ‐BN衬底上变为逐层生长，在SiO ₂ / Si上变为3D岛生长。由晶格失配引起的h- BN衬底中的压缩应变对于确定这些二维成核动力学模型中的不同生长模式起着至关重要的作用。

更新日期：2017-01-20

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