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Solid State Intercalation, Deintercalation, and Cation Exchange in Colloidal 2D Bi2Se3 and Bi2Te3 Nanocrystals
Chemistry of Materials ( IF 7.2 ) Pub Date : 2017-01-13 00:00:00 , DOI: 10.1021/acs.chemmater.6b05440
Joka Buha 1 , Liberato Manna 1
Affiliation  

Intercalation and deintercalation of Cu into and from Bi2Se3 and Bi2Te3 colloidal nanocrystals is demonstrated in solid state. For this purpose, the nanocrystals are deposited on a solid substrate and subjected to moderate heating in the presence of a Cu source or a Cu scavenger. The results of the solid state experiments are consistent with those produced by solution-based intercalation. At moderate levels of solid state intercalation above about 10 at%, Cu forms superlattice structures in both Bi2Se3 and Bi2Te3, while higher intercalation levels ultimately lead to cation exchange. This is particularly the case in Bi2Se3 which transitions to Cu2-xSe while maintaining the two-dimensional morphology of the starting nanocrystals. The solid state intercalation is reversible, and Cu can also be deintercalated from the Bi2Se3 and Bi2Te3 nanocrystals upon heating and utilized in other reactions on the solid substrate. The extent of intercalation and deintercalation, however, depends on any interaction between the intercalant and host nanocrystals in response to heating. The concepts explored here hold promise for future development of novel solid state based energy storage nanodevices or possibly NC-based devices whose properties and/or function could be reversibly modulated through a combination of solid state CE and intercalation/deintercalation.

中文翻译:

胶态2D Bi 2 Se 3和Bi 2 Te 3纳米晶体的固态嵌入,脱嵌和阳离子交换

固态下,Cu嵌入Bi 2 Se 3和Bi 2 Te 3胶体晶体中和从Cu 2脱嵌。为此目的,将纳米晶体沉积在固体基底上,并在Cu源或Cu清除剂的存在下进行适度加热。固态实验的结果与通过基于溶液的插层法产生的结果一致。在高于约10 at%的中等水平的固态插层下,Cu在Bi 2 Se 3和Bi 2 Te 3中均形成超晶格结构,而较高的插层水平最终导致阳离子交换。Bi 2中尤其如此Se 3转变为Cu 2-x Se,同时保持起始纳米晶体的二维形态。固态插层是可逆的,并且Cu也可以从Bi 2 Se 3和Bi 2 Te 3中脱嵌加热后形成纳米晶体,并用于固体基质上的其他反应。然而,嵌入和脱嵌的程度取决于响应于加热的嵌入剂和主体纳米晶体之间的任何相互作用。此处探讨的概念为新型固态储能纳米器件或可能基于NC的器件的未来发展带来了希望,其性能和/或功能可以通过固态CE和插层/脱嵌的组合可逆地进行调节。
更新日期:2017-01-13
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