自旋轨道和交换-磁性相互作用的温度可调谐竞争驱动的二维电子的自旋取向,Nano Letters

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自旋轨道和交换-磁性相互作用的温度可调谐竞争驱动的二维电子的自旋取向
Nano Letters ( IF 9.6 ) Pub Date : 2017-01-04 00:00:00 , DOI: 10.1021/acs.nanolett.6b04036
Alexander Generalov ₁ , Mikhail M. Otrokov _{2,

3} , Alla Chikina ₄ , Kristin Kliemt ₅ , Kurt Kummer ₆ , Marc Höppner ₇ , Monika Güttler ₄ , Silvia Seiro ₈ , Alexander Fedorov ₉ , Susanne Schulz ₄ , Steffen Danzenbächer ₄ , Evgueni V. Chulkov _{2,

3,

10} , Christoph Geibel ₈ , Clemens Laubschat ₄ , Pavel Dudin ₁₁ , Moritz Hoesch ₁₁ , Timur Kim ₁₁ , Milan Radovic , Ming Shi , Nicholas C. Plumb , Cornelius Krellner ₅ , Denis V. Vyalikh _{2,

4,

10,

12}

Affiliation

MAX IV Laboratory, Lund University, Box 118, 22100 Lund, Sweden
Departamento de Fisica de Materiales and CFM-MPC UPV/EHU, Donostia International Physics Center (DIPC), 20080 San Sebastian, Spain
Tomsk State University, Lenina Av., 36, 634050 Tomsk, Russia
Institute of Solid State Physics, Dresden University of Technology, Zellescher Weg 16, D-01062 Dresden, Germany
Kristall- und Materiallabor, Physikalisches Institut, Goethe-Universität Frankfurt, Max-von-Laue Straße 1, D-60438 Frankfurt am Main, Germany
European Synchrotron Radiation Facility, 71 Avenue des Martyrs, CS40220, F-38043 Grenoble Cedex 9, France
Max Planck Institute for Solid State Research, Heisenberg Straße 1, D-70569 Stuttgart, Germany
Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, D-01187 Dresden, Germany
IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany
Saint Petersburg State University, 198504 Saint Petersburg, Russia
Diamond Light Source, Didcot OX11 0DE, U.K.
IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain

寻找方法来创建和控制二维电子态（2DESs）的自旋相关特性，是对新型自旋器件的主要挑战。自旋轨道和交换磁相互作用（SOI和EMI）是两个基本机制，可用来获得载流子自旋相关特性的可调性。HoRh ₂ Si ₂的硅表面似乎是一个独特的模型系统，可以通过改变温度来可视化并控制同时发生的SOI和EMI。该系统的美丽和简单之处在于4 f时刻，它是2DES上的多重调谐工具，如4 f在实质上不同的温度下，平行于和垂直于表面顺序的投影。在这里，我们显示了当4个f矩无序时，SOI仅将2DES的自旋锁定在表面平面上：Rashba-Bychkov效应。当温度逐渐降低并且系统经历磁阶时，上升的EMI逐渐与SOI竞争，从而导致2DES的自旋相关特性发生根本变化。自旋旋转并朝向平面外Ho 4 f矩重新定向。我们的发现表明，仅使用一个参数：温度，就可以以受控方式控制表面上二维电子的自旋方向和自旋分裂。

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Spin Orientation of Two-Dimensional Electrons Driven by Temperature-Tunable Competition of Spin–Orbit and Exchange–Magnetic Interactions

Finding ways to create and control the spin-dependent properties of two-dimensional electron states (2DESs) is a major challenge for the elaboration of novel spin-based devices. Spin–orbit and exchange–magnetic interactions (SOI and EMI) are two fundamental mechanisms that enable access to the tunability of spin-dependent properties of carriers. The silicon surface of HoRh₂Si₂ appears to be a unique model system, where concurrent SOI and EMI can be visualized and controlled by varying the temperature. The beauty and simplicity of this system lie in the 4f moments, which act as a multiple tuning instrument on the 2DESs, as the 4f projections parallel and perpendicular to the surface order at essentially different temperatures. Here we show that the SOI locks the spins of the 2DESs exclusively in the surface plane when the 4f moments are disordered: the Rashba-Bychkov effect. When the temperature is gradually lowered and the system experiences magnetic order, the rising EMI progressively competes with the SOI leading to a fundamental change in the spin-dependent properties of the 2DESs. The spins rotate and reorient toward the out-of-plane Ho 4f moments. Our findings show that the direction of the spins and the spin-splitting of the two-dimensional electrons at the surface can be manipulated in a controlled way by using only one parameter: the temperature.

更新日期：2017-01-04

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