用于发光器件的化学气相沉积垂直堆叠的p-MoS2 / n-MoS2异质结构的外延生长,Nano Energy

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用于发光器件的化学气相沉积垂直堆叠的p-MoS2 / n-MoS2异质结构的外延生长
Nano Energy ( IF 16.8 ) Pub Date : 2017-01-05 15:48:29
Revannath Dnyandeo Nikam, Poonam Ashok Sonawane, Raman Sankar, Yit-Tsong Chen

尽管二维垂直异质结构取得了巨大的进步，但是这些异质结构在发光器件中的受控生长和潜在应用尚未得到很好的确立。在这里，我们首次报道了通过化学气相沉积（CVD）方法外延生长二维p-MoS ₂ / n-MoS ₂垂直异质结构的方法，该方法首先合成n-MoS ₂，然后进行合成通过控制生长温度，在n-MoS ₂之上外延生长p-MoS ₂。原子分辨率扫描透射电子显微镜（STEM）成像显示六边形p-MoS ₂ / n-MoS ₂的垂直堆叠双层在生长过程中首选2H堆叠阶段。通过拉曼光谱和光致发光（PL）光谱检查了所生长的p-MoS ₂ / n-MoS ₂异质结构的结构和光学特征。事实证明，这种新颖的混合异质结构是高效白光发光二极管（WLED）的出色构建基块。此外，我们将p-MoS ₂ / n-MoS ₂转移到p- GaN双层的顶部，以制造四层（4-L）n-MoS ₂ / p-MoS ₂ / p-GaN异质结构，会在正向偏压下发射电致发光（EL）。EL光谱包含三个发射峰，中心位于481nm（来自p-GaN），525nm（来自p-MoS ₂）和642nm（来自n-MoS）₂），主要发射峰位于642nm。由n-MoS ₂ / p-MoS ₂ / p-GaN异质结构组成的WLED器件在4V偏置电压下显示出30,548cd / m ^2的亮度，29％的发光效率和294lm / W的发光效率。这项工作表明白光发射可以从垂直堆叠的基于2D材料的几层异质结构中产生，这对于构造用于低成本显示，照明和光通信的颜色可调发光器也具有很大的潜力。

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Epitaxial Growth of Vertically Stacked p-MoS2/n-MoS2 Heterostructures by Chemical Vapor Deposition for Light Emitting Devices

Despite the dramatic advances of two-dimensional vertical heterostructure, the controlled growth and potential applications in light emitting devices of these heterostructures have not yet been well established. Here, we report, for the first time, the epitaxial growth of two-dimensional p-MoS₂/n-MoS₂ vertical heterostructures by a chemical vapor deposition (CVD) method, where the n-MoS₂ was synthesized first, followed by an epitaxial growth of p-MoS₂ on top of the n-MoS₂ via a control of the growth temperature. Atomic-resolution scanning transmission electron microscopy (STEM) imaging reveals that the vertically stacked bilayer of the hexagram-shaped p-MoS₂/n-MoS₂ preferred the 2H stacking phase during the growth. The structural and optical features of the as-grown p-MoS₂/n-MoS₂ heterostructure were examined by Raman and photoluminescence (PL) spectroscopy. This novel hybrid heterostructure was demonstrated to be an excellent building block for a highly efficient white light emitting diode (WLED). In addition, we transferred the p-MoS₂/n-MoS₂ on top of a p-GaN bilayer to fabricate a tetra-layered (4-L) n-MoS₂/p-MoS₂/p-GaN heterostructure, which could emit electroluminescence (EL) in forward bias. The EL spectra comprise three emission peaks centered at 481nm (from p-GaN), 525nm (from p-MoS₂), and 642nm (from n-MoS₂), with a dominant emission peak located at 642nm. The WLED device composed of the n-MoS₂/p-MoS₂/p-GaN heterostructure showed a luminance of 30,548cd/m², luminescence efficiency of 29% and the luminous efficacy of 294lm/W at a bias voltage of 4V. This work demonstrates that white light emission can be generated from vertically stacked few-layered 2D materials-based heterostructures, which also hold great potential for constructing color-tunable light emitters for low-cost display, lighting, and optical communication.

更新日期：2017-01-06

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