Chemical Vapor Deposition Growth of Few-Layer MoTe2 in the 2H, 1T′, and 1T Phases: Tunable Properties of MoTe2 Films,ACS Nano

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Chemical Vapor Deposition Growth of Few-Layer MoTe2 in the 2H, 1T′, and 1T Phases: Tunable Properties of MoTe2 Films
ACS Nano ( IF 15.8 ) Pub Date : 2017-01-03 00:00:00 , DOI: 10.1021/acsnano.6b07499
Thomas A. Empante , Yao Zhou ₁ , Velveth Klee , Ariana E. Nguyen , I-Hsi Lu , Michael D. Valentin , Sepedeh A. Naghibi Alvillar , Edwin Preciado , Adam J. Berges , Cindy S. Merida , Michael Gomez , Sarah Bobek , Miguel Isarraraz , Evan J. Reed ₁ , Ludwig Bartels

Affiliation

Chemical vapor deposition allows the preparation of few-layer films of MoTe₂ in three distinct structural phases depending on the growth quench temperature: 2H, 1T′, and 1T. We present experimental and computed Raman spectra for each of the phases and utilize transport measurements to explore the properties of the 1T MoTe₂ phase. Density functional theory modeling predicts a (semi-)metallic character. Our experimental 1T films affirm the former, show facile μA-scale source-drain currents, and increase in conductivity with temperature, different from the 1T′ phase. Variation of the growth method allows the formation of hybrid films of mixed phases that exhibit susceptibility to gating and significantly increased conductivity.

中文翻译：

少量MoTe ₂在2H，1T'和1T相中的化学气相沉积生长：MoTe ₂膜的可调性质

化学气相沉积允许根据生长骤冷温度：2H，1T'和1T，在三个不同的结构相中制备MoTe ₂的多层膜。我们介绍了每个相的实验和计算拉曼光谱，并利用传输测量来探索1T MoTe ₂相的性质。密度泛函理论建模可预测（半）金属特性。我们的实验性1T薄膜证实了前者，它显示了容易的μA级源极-漏极电流，并且电导率随温度的升高而增加，这与1T'相不同。生长方法的变化允许形成混合相的混合膜，所述混合相显示出对浇口的敏感性并显着提高了电导率。

更新日期：2017-01-03

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