Shape Engineering Driven by Selective Growth of SnO2 on Doped Ga2O3 Nanowires,Nano Letters

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Shape Engineering Driven by Selective Growth of SnO2 on Doped Ga2O3 Nanowires
Nano Letters ( IF 9.6 ) Pub Date : 2016-12-23 00:00:00 , DOI: 10.1021/acs.nanolett.6b04189
Manuel Alonso-Orts ₁ , Ana M. Sánchez ₂ , Steven A. Hindmarsh ₂ , Iñaki López ₁ , Emilio Nogales ₁ , Javier Piqueras ₁ , Bianchi Méndez _{1,

2}

Affiliation

Tailoring the shape of complex nanostructures requires control of the growth process. In this work, we report on the selective growth of nanostructured tin oxide on gallium oxide nanowires leading to the formation of SnO₂/Ga₂O₃ complex nanostructures. Ga₂O₃ nanowires decorated with either crossing SnO₂ nanowires or SnO₂ particles have been obtained in a single step treatment by thermal evaporation. The reason for this dual behavior is related to the growth direction of trunk Ga₂O₃ nanowires. Ga₂O₃ nanowires grown along the [001] direction favor the formation of crossing SnO₂ nanowires. Alternatively, SnO₂ forms rhombohedral particles on [110] Ga₂O₃ nanowires leading to skewer-like structures. These complex oxide structures were grown by a catalyst-free vapor–solid process. When pure Ga and tin oxide were used as source materials and compacted powders of Ga₂O₃ acted as substrates, [110] Ga₂O₃ nanowires grow preferentially. High-resolution transmission electron microscopy analysis reveals epitaxial relationship lattice matching between the Ga₂O₃ axis and SnO₂ particles, forming skewer-like structures. The addition of chromium oxide to the source materials modifies the growth direction of the trunk Ga₂O₃ nanowires, growing along the [001], with crossing SnO₂ wires. The SnO₂/Ga₂O₃ junctions does not meet the lattice matching condition, forming a grain boundary. The electronic and optical properties have been studied by XPS and CL with high spatial resolution, enabling us to get both local chemical and electronic information on the surface in both type of structures. The results will allow tuning optical and electronic properties of oxide complex nanostructures locally as a function of the orientation. In particular, we report a dependence of the visible CL emission of SnO₂ on its particular shape. Orange emission dominates in SnO₂/Ga₂O₃ crossing wires while green-blue emission is observed in SnO₂ particles attached to Ga₂O₃ trunks. The results show that the Ga₂O₃–SnO₂ system appears to be a benchmark for shape engineering to get architectures involving nanowires via the control of the growth direction of the nanowires.

中文翻译：

SnO ₂在掺杂的Ga ₂ O ₃纳米线上的选择性生长驱动的形状工程

定制复杂纳米结构的形状需要控制生长过程。在这项工作中，我们报告了纳米结构的氧化锡在氧化镓纳米线上的选择性生长，导致形成SnO ₂ / Ga ₂ O ₃复合纳米结构。通过热蒸发的单步处理已经获得了用交叉的SnO ₂纳米线或SnO ₂颗粒装饰的Ga ₂ O ₃纳米线。这种双重行为的原因与主干Ga ₂ O ₃纳米线的生长方向有关。镓₂ O ₃沿着[001]方向生长的纳米线有利于交叉的SnO ₂纳米线的形成。或者，SnO ₂在[110] Ga ₂ O ₃纳米线上形成菱面体颗粒，从而形成串状结构。这些复杂的氧化物结构是通过无催化剂的气固过程生长的。当使用纯Ga和氧化锡作为原料，并且将Ga ₂ O _3的压实粉末用作基材时，[110] Ga ₂ O ₃纳米线会优先生长。高分辨率透射电子显微镜分析揭示了Ga ₂ O ₃轴与SnO ₂之间的外延关系晶格匹配颗粒，形成串状结构。向源材料中添加氧化铬会改变主干Ga ₂ O ₃纳米线的生长方向，该线沿着[001]生长，且与SnO ₂线交叉。SnO ₂ / Ga ₂ O ₃结不满足晶格匹配条件，形成晶界。XPS和CL已使用高空间分辨率对电子和光学特性进行了研究，这使我们能够在两种类型的结构中获取表面上的局部化学和电子信息。结果将允许根据取向局部地调节氧化物复合物纳米结构的光学和电子性质。特别是，我们报告了SnO ₂的可见CL发射与其特定形状的相关性。在SnO ₂ / Ga ₂ O ₃交叉导线中橙色发光占主导，而在附着于Ga ₂ O _3的SnO ₂颗粒中则观察到蓝绿色发光树干。结果表明，Ga ₂ O ₃ -SnO ₂系统似乎是形状工程的基准，可以通过控制纳米线的生长方向来获得包含纳米线的体系结构。

更新日期：2016-12-23

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