High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process,ACS Applied Materials & Interfaces

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High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2016-12-06 00:00:00 , DOI: 10.1021/acsami.6b09990
M. Benwadih ₁ , R. Coppard ₁ , K. Bonrad ₂ , A. Klyszcz ₂ , D. Vuillaume ₃

Affiliation

Amorphous, sol–gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm²/(V s), as well as a mobility of 7 cm²/(V s) on solid substrate (Si/SiO₂) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol–gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.

中文翻译：

具有低热预算的紫外脉冲光工艺的高迁移率柔性非晶IGZO薄膜晶体管

在塑料基板上进行溶胶-凝胶处理的非晶铟镓锌氧化物（IGZO）晶体管，具有可打印的栅极电介质，电子迁移率为4.5 cm ² /（V s），迁移率为7 cm ² /（V s））（Si / SiO ₂）的报告。这些性能是使用低温脉冲光退火技术获得的。与传统的（炉或热板）退火工艺相比，紫外（UV）脉冲光系统是一项创新技术，我们已成功在塑料基板上制造的溶胶-凝胶IGZO薄膜晶体管（TFT）上实现了该工艺。已经对光子退火处理进行了优化，以获得具有显着电性能的IGZO TFT。沉积在该脉冲紫外光退火膜上的有机栅极电介质层也已进行了优化。该技术对于在塑料基板上开发无定形IGZO TFT很有前景。

更新日期：2016-12-06

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