Analysis of Sputtering Damage on I–V Curves for Perovskite Solar Cells and Simulation with Reversed Diode Model,The Journal of Physical Chemistry C

当前位置： X-MOL 学术 › J. Phys. Chem. C › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Analysis of Sputtering Damage on I–V Curves for Perovskite Solar Cells and Simulation with Reversed Diode Model
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2016-12-12 00:00:00 , DOI: 10.1021/acs.jpcc.6b09219
Hiroyuki Kanda ₁ , Abdullah Uzum _{1,

2} , Ajay K. Baranwal ₁ , T. A. Nirmal Peiris _{1,

3} , Tomokazu Umeyama , Hiroshi Imahori , Hiroshi Segawa ₃ , Tsutomu Miyasaka ₄ , Seigo Ito ₁

Affiliation

Tin-doped indium oxide (ITO) sputtering is known as a damaging cause on organic hole transporting material in solar cells. In order to gain more insights into the reasons for poor device performance of perovskite solar cells by the ITO sputtering on Spiro-OMeTAD, here we present an in-depth study by I–V simulation analysis using corresponding equivalent circuit models. First, experimental I–V data were obtained for the perovskite solar cells with ⟨FTO/TiO₂(dense)/TiO₂(mesoporous)/CH₃NH₃PbI₃/Spiro-OMeTAD/ITO/Au⟩ configuration. An Au layer (t = 50 nm) was deposited on the ITO as a contact layer. The simulation studies indicated that sputtering of ITO onto Spiro-OMeTAD introduced a reverse Schottky diode and an additional diode to the device that could be relating the sputtering damage of the Spiro-OMeTAD layer. By considering the parameter of the reverse diode element as a function of sputtering time, it was found that the barrier height of the reverse Schottky diode was enhanced by the sputtering damage against Spiro-OMeTAD, which could be the key reason for the reduced fill factor of the devices.

中文翻译：

对溅射伤害的分析我- V曲线钙钛矿太阳能电池与仿真反向二极管模型

众所周知，掺锡氧化铟（ITO）溅射是对太阳能电池中有机空穴传输材料的破坏原因。为了通过Spiro-OMeTAD上的ITO溅射获得更多钙钛矿型太阳能电池器件性能差的原因的见解，在此，我们使用相应的等效电路模型通过I – V模拟分析进行了深入研究。首先，实验我- V为钙钛矿太阳能电池⟨FTO/二氧化钛得到的数据₂（密实）/的TiO ₂（介孔）/ CH ₃ NH ₃碘化铅₃ /螺环-OMeTAD / ITO /Au⟩配置。Au层（吨＝ 50nm）作为接触层沉积在ITO上。仿真研究表明，在Spiro-OMeTAD上溅射ITO会向器件引入反向肖特基二极管和一个附加二极管，这可能与Spiro-OMeTAD层的溅射损伤有关。通过考虑反向二极管元件的参数与溅射时间的函数关系，发现反向肖特基二极管的势垒高度因溅射对Spiro-OMeTAD的损伤而增加，这可能是填充因子降低的关键原因的设备。

更新日期：2016-12-12

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南