当前位置：
X-MOL 学术
›
ACS Appl. Mater. Interfaces
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2016-11-30 00:00:00 , DOI: 10.1021/acsami.6b11774 Jiazhen Sheng 1 , Hwan-Jae Lee 1 , Saeroonter Oh 2 , Jin-Seong Park 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2016-11-30 00:00:00 , DOI: 10.1021/acsami.6b11774 Jiazhen Sheng 1 , Hwan-Jae Lee 1 , Saeroonter Oh 2 , Jin-Seong Park 1
Affiliation
|
Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (H2O2) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (In2O3) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective In2O3 and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 °C. We propose growth temperature-dependent surface reactions during the In2O3 cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm2 V–1 s–1 and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate without performance degradation, showing the great potential of ALD-grown TFTs for flexible display applications.
中文翻译：
低温原子层沉积的柔性高性能非晶铟锌氧化物薄膜晶体管
使用[1,1,1-三甲基-N-（三甲基甲硅烷基）硅氨基]铟（INCA-1）作为铟前体，通过原子层沉积（ALD）在不同温度下沉积非晶态铟锌氧化物（IZO）薄膜， Diethlzinc（DEZ）作为锌前体，而过氧化氢（H 2 O 2）作为反应物。通过重复的超循环来进行IZO沉积的ALD工艺，包括一个氧化铟（In 2 O 3）循环和一个氧化锌（ZnO）循环。在150、175和200°C的ALD生长温度下，IZO的生长速率偏离In 2 O 3和ZnO的生长速率之和。我们建议在In期间生长依赖于温度的表面反应2 O 3周期与增长率结果相对应。用ALD生长的IZO薄膜作为有源层来制造薄膜晶体管（TFT）。非晶态IZO TFT表现出42.1 cm 2 V –1 s –1的高迁移率和良好的正偏压温度应力稳定性。最终，柔性IZO TFT成功地制造在聚酰亚胺衬底上，而性能没有下降，显示出ALD成长型TFT在柔性显示应用中的巨大潜力。
更新日期：2016-11-30
中文翻译：
低温原子层沉积的柔性高性能非晶铟锌氧化物薄膜晶体管
使用[1,1,1-三甲基-N-（三甲基甲硅烷基）硅氨基]铟（INCA-1）作为铟前体，通过原子层沉积（ALD）在不同温度下沉积非晶态铟锌氧化物（IZO）薄膜， Diethlzinc（DEZ）作为锌前体，而过氧化氢（H 2 O 2）作为反应物。通过重复的超循环来进行IZO沉积的ALD工艺，包括一个氧化铟（In 2 O 3）循环和一个氧化锌（ZnO）循环。在150、175和200°C的ALD生长温度下，IZO的生长速率偏离In 2 O 3和ZnO的生长速率之和。我们建议在In期间生长依赖于温度的表面反应2 O 3周期与增长率结果相对应。用ALD生长的IZO薄膜作为有源层来制造薄膜晶体管（TFT）。非晶态IZO TFT表现出42.1 cm 2 V –1 s –1的高迁移率和良好的正偏压温度应力稳定性。最终，柔性IZO TFT成功地制造在聚酰亚胺衬底上，而性能没有下降，显示出ALD成长型TFT在柔性显示应用中的巨大潜力。
京公网安备 11010802027423号