L1₀ (Fe_xNi_1-x)_0.5Pt_0.5 ordered alloy films with a face-centered tetragonal (fct) structure were successfully fabricated via magnetron sputtering. The effects of Fermi level shifts and impurity scattering on the anomalous Hall effect in these films were studied with both experiments and first-principles calculations. Both residual resistivity and phonon scattering were found to contribute to skew scattering, with their contributions decreasing as Fe content increases. Ab initio calculations reveal that the position of the Fermi surface rises with increasing the Fe content x , leading to a transition of intrinsic scattering parameter b from negative to positive between x = 0.4 and x = 0.6. Moreover, larger spin-slip on the Fe-rich side significantly enhances the anomalous Hall resistivity. Our results reveal that intrinsic mechanisms dominate on the Fe-rich side, whereas skew scattering mechanisms prevail on the Ni-rich side. This study establishes a comprehensive correlation among band features, Fermi level positioning, and impurity scattering in this prototypical system.

中文翻译：

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费米能级和杂质散射对 L10 FeNiPt 合金薄膜中异常霍尔效应的影响


通过磁控溅射成功制备了具有面心四方 （fct） 结构的 L1 ₀ （Fe _x Ni _{1- x} ） _0.5 Pt _0.5 有序合金薄膜。通过实验和第一性原理计算研究了费米能级偏移和杂质散射对这些薄膜中异常霍尔效应的影响。研究发现残余电阻率和声子散射都有助于偏斜散射，它们的贡献随着 Fe 含量的增加而减小。从头计算表明，费米表面的位置随着 Fe 含量 x 的增加而上升，导致本征散射参数 b 在 x = 0.4 和 x = 0.6 之间从负转变为正。此外，富铁侧较大的自旋滑移显著增强了异常霍尔电阻率。我们的结果表明，本征机制在富 Fe 侧占主导地位，而偏斜散射机制在富 Ni 侧占主导地位。本研究在这个原型系统中建立了能带特征、费米能级定位和杂质散射之间的全面相关性。