In the rapidly evolving field of memory technology, material strategies have been continuously optimized to achieve high-performance memory devices, many of which have successfully transitioned to industrial applications. A critical focus has been placed on selecting and refining materials that are environmentally sustainable and amenable to facile processing methods. While resistive random-access memory (RRAM) materials, mechanisms, and applications have been comprehensively reviewed, studies focusing on strategic approaches to material optimization remain limited. This review delves into the burgeoning domain of polymer/organic memory and memristors, with particular attention to electrode and switching layer (SL) material modifications. Key strategies include blending polymers, incorporating nanoparticles, quantum dots, or nanosheets into the SL, and fabricating bilayer or multilayer SLs within the metal-insulator-metal (MIM) structure. These materials and their configurations play pivotal roles in enabling various memory types (WORM, NVM, VM) and achieving low-voltage operation, critical for reducing energy consumption and improving device longevity. By interlinking phenomena and presenting unique features from literature, this review offers readers insights into innovative approaches to materials selection, device geometry, and modulation of biasing stimuli. It serves as a comprehensive guide towards understanding of materials strategies in organic RRAM devices for next-generation memory and memristor technologies.

中文翻译：

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材料和器件几何形状对 RRAM 和忆阻器性能的关键作用：综述


在快速发展的内存技术领域，材料策略不断优化，以实现高性能内存设备，其中许多已成功过渡到工业应用。一个关键的重点是选择和提炼环境可持续且适合简单加工方法的材料。虽然已经全面回顾了电阻式随机存取存储器 （RRAM） 材料、机制和应用，但专注于材料优化战略方法的研究仍然有限。这篇综述深入探讨了聚合物/有机存储器和忆阻器的新兴领域，特别关注电极和开关层 （SL） 材料改性。关键策略包括混合聚合物，将纳米颗粒、量子点或纳米片掺入 SL 中，以及在金属-绝缘体-金属 （MIM） 结构中制造双层或多层 SL。这些材料及其配置在支持各种内存类型（WORM、NVM、VM）和实现低电压运行方面发挥着关键作用，这对于降低能耗和延长设备使用寿命至关重要。通过相互联系现象并展示文献中的独特特征，这篇综述为读者提供了对材料选择、器件几何形状和偏置刺激调制的创新方法的见解。它是了解下一代存储器和忆阻器技术的有机 RRAM 器件材料策略的综合指南。