The intercalated two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much attention for their designable structures and novel properties. Among this family, host materials with low symmetry such as 1T′ phase TMDCs are particularly interesting because of their potentials in inducing unconventional phenomena. However, such systems typically have low quality and poor stability, hindering further study of the structure–property relationship and applications. In this work, we intercalated Cu into 1T′ MoS₂ with high crystallinity and high thermal stability up to ∼300 °C. We identified the distribution and arrangement of Cu intercalators for the first time, and the results show that Cu intercalators occupy partially the tetrahedral interstices aligned with Mo sites. The obtained Cu-1T′ MoS₂ exhibits an insulating hopping transport behavior with a large temperature coefficient of resistance reaching −4∼−2%·K^–1. This work broadens the artificial intercalated structure library and promotes the structure design and property modulation of layered materials.

中文翻译：

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具有电绝缘行为的 Cu 插层稳定的 1T′ MoS2


插层二维 （2D） 过渡金属硫化物 （TMDC） 因其可设计的结构和新颖的性能而备受关注。在这个家族中，具有低对称性的主体材料，如 1T′ 相 TMDC，特别有趣，因为它们有可能诱导非常规现象。然而，此类体系通常质量低、稳定性差，阻碍了对结构-性能关系和应用的进一步研究。在这项工作中，我们将 Cu 嵌入到具有高结晶度和高热稳定性的 1T′ MoS ₂ 中，最高可达 ∼300 °C。 我们首次确定了 Cu 嵌入体的分布和排列，结果表明 Cu 嵌入体部分占据了与 Mo 位点对齐的四面体间隙。获得的 Cu-1T′ MoS ₂ 表现出绝缘跳跃传输行为，电阻温度系数大，达到 −4∼−2%·K ^–1 .这项工作拓宽了人工插层结构库，促进了层状材料的结构设计和性能调控。