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Aloof Electron Probing of In-Plane Surface Photovoltaic Charge Distributions on GaAs Surfaces
ACS Photonics ( IF 6.5 ) Pub Date : 2025-01-27 , DOI: 10.1021/acsphotonics.4c01997
Zilin Chen, Wayne Cheng-Wei Huang, Herman Batelaan
ACS Photonics ( IF 6.5 ) Pub Date : 2025-01-27 , DOI: 10.1021/acsphotonics.4c01997
Zilin Chen, Wayne Cheng-Wei Huang, Herman Batelaan
The motion of free electrons moving parallel and above a semiconductor surface can be influenced by shining a laser light onto the surface. Here we report strong deflection of aloof electrons by an undoped GaAs surface illuminated with a 633 nm laser. The deflecting electric field from the surface photovoltaic charges extends 100 μm into the vacuum. As surface photovoltage (SPV) is sensitive to the electronic states of the GaAs surface, the aloof electron beam serves as a probe for SPV charge dynamics on the mesoscopic length scale. The observed in-plane SPV charge distribution persists beyond 1 second after the laser beam is blocked. Our work suggests the possibility of writing designed 2D charge patterns on semiconductor surfaces with a scanning laser beam, providing unusual flexibility for electron beam manipulation.
中文翻译:
GaAs 表面面内光伏电荷分布的超远电子探测
将激光照射到半导体表面上会影响平行移动的自由电子的运动。在这里,我们报告了用 633 nm 激光照射的未掺杂 GaAs 表面对超离电子的强烈偏转。来自表面光伏电荷的偏转电场延伸到真空中 100 μm。由于表面光电压 (SPV) 对 GaAs 表面的电子状态很敏感,因此超远电子束用作细观长度尺度上 SPV 电荷动力学的探针。观察到的面内 SPV 电荷分布在激光束被阻挡后持续超过 1 秒。我们的工作表明,可以使用扫描激光束在半导体表面上写入设计的 2D 电荷图案,从而为电子束操作提供不寻常的灵活性。
更新日期:2025-01-27
中文翻译:
GaAs 表面面内光伏电荷分布的超远电子探测
将激光照射到半导体表面上会影响平行移动的自由电子的运动。在这里,我们报告了用 633 nm 激光照射的未掺杂 GaAs 表面对超离电子的强烈偏转。来自表面光伏电荷的偏转电场延伸到真空中 100 μm。由于表面光电压 (SPV) 对 GaAs 表面的电子状态很敏感,因此超远电子束用作细观长度尺度上 SPV 电荷动力学的探针。观察到的面内 SPV 电荷分布在激光束被阻挡后持续超过 1 秒。我们的工作表明,可以使用扫描激光束在半导体表面上写入设计的 2D 电荷图案,从而为电子束操作提供不寻常的灵活性。