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Highly Resistive Semitransparent G–aSi–ITO Photodetectors with Graded Energy Band Gaps
ACS Photonics ( IF 6.5 ) Pub Date : 2025-01-23 , DOI: 10.1021/acsphotonics.4c01562
Jiyoun Jeong, Minho Choi, Jaewu Choi

Nonhydrogenated, undoped semitransparent amorphous silicon thin films exhibit a thickness-dependent Tauc optical energy band gap and form uniquely highly resistive devices with a graded energy band gap. When combined with optically transparent, electrically conductive, and flexible graphene, these highly resistive semitransparent amorphous silicon films with graded energy band gaps offer significant potential for the development of graphene (G)–amorphous silicon (aSi: nonhydrogenated and undoped)–indium tin oxide (ITO) photodetector arrays fabricated on glass. These arrays are promising for future semitransparent optoelectronic applications, such as sensors in displays and see-through or video-through augmented reality (AR)/virtual reality (VR) glasses. Notably, these structures exhibit unique junction characteristics, with the Fermi level pinned at bulk defect states, as well as distinctive photoresponse properties.

中文翻译:


具有渐变能带间隙的高电阻半透明 G-aSi-ITO 光电探测器



非氢化、未掺杂的半透明非晶硅薄膜表现出与厚度相关的 Tauc 光能带隙,并形成具有渐变能带隙的独特高电阻器件。当与光学透明、导电和柔性石墨烯结合时,这些具有渐变能带隙的高电阻半透明非晶硅薄膜为石墨烯 (G)-非晶硅(aSi:非氢化和未掺杂)-氧化铟锡 (ITO) 光电探测器阵列的开发提供了巨大的潜力玻璃制造。这些阵列有望用于未来的半透明光电应用,例如显示器中的传感器以及透视或视频增强现实 (AR)/虚拟现实 (VR) 眼镜。值得注意的是,这些结构表现出独特的结特性,费米能级固定在体缺陷状态,以及独特的光响应特性。
更新日期:2025-01-24
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