Integrating semiconductor nanowires with silicon platforms can combine the advantages of both materials to provide new functionality compared with each type of material. However, the direct localized growth of semiconductor nanowires on silicon platforms still remains a challenge. Herein, an atmospheric pressure microplasma jet, based on the integration of microplasma with the 3D printing technique, was applied for the synthesis of gold nanoparticles (AuNPs). The obtained AuNPs were then used as catalysts for the physical vapor deposition (PVD) growth of cadmium sulfide nanowires (CdS NWs). The results showed that AuNPs can be directly fabricated on the surface of silicon wafers in one step without chemical reducing agents. They also demonstrated good catalytic activity in the growth of CdS NWs via a typical vapor–liquid–solid (VLS) mechanism, where CdS NWs of straight sidewalls with a AuNP at their tips were formed. Complementary characterization reveals that CdS NWs possess crystalline structure, with the atomic ratio of Cd/S close to 1:1 stoichiometry. The energy band gap was estimated to be 2.5 eV from the photoluminescence spectrum. In addition, the influence of process parameters like the Au³⁺ concentration and plasma processing time on the products was studied. Both increase of the Au³⁺ concentration and plasma processing time led to the formation of high-density AuNPs and CdS NWs. With the rise of the Au³⁺ concentration, the average diameter of the AuNPs gradually increased from 13.17 nm at 0.02 mM to 17.0 nm at 0.05 mM and finally 20.44 nm at 0.1 mM. This also led to the formation of CdS NWs of large diameters. This work offers a simple, direct, and green way for localized fabrication of metal catalysts on target substrates for the growth of NWs and has unprecedented potential in various fields like catalysis, surface modification, and additive manufacturing.

中文翻译：

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微等离子体制备的金纳米颗粒催化 CdS 纳米线生长


将半导体纳米线与硅平台集成可以结合两种材料的优势，与每种类型的材料相比，提供新的功能。然而，半导体纳米线在硅平台上的直接局部生长仍然是一个挑战。在此，基于微等离子体与 3D 打印技术的集成，常压微等离子体射流被应用于金纳米颗粒 （AuNPs） 的合成。然后将获得的 AuNPs 用作硫化镉纳米线 （CdS NWs） 物理气相沉积 （PVD） 生长的催化剂。结果表明，无需化学还原剂，即可一步直接在硅片表面制备 AuNPs。他们还通过典型的气-液-固 （VLS） 机制在 CdS NWs 的生长中表现出良好的催化活性，其中形成了尖端带有 AuNP 的直侧壁的 CdS NWs。互补表征表明，CdS NWs 具有晶体结构，Cd/S 的原子比接近 1：1 化学计量。能量带隙估计为光致发光光谱的 2.5 eV。此外，还研究了 Au³⁺ 浓度和等离子体处理时间等工艺参数对产品的影响。Au³⁺ 浓度的增加和等离子体处理时间都导致了高密度 AuNPs 和 CdS NWs 的形成。随着 Au³⁺ 浓度的增加，AuNPs 的平均直径从 0.02 mM 的 13.17 nm 逐渐增加到 0.05 mM 的 17.0 nm，最后在 0.1 mM 时增加到 20.44 nm。这也导致了大直径 CdS NWs 的形成。 这项工作为在靶基底上局部制造金属催化剂以促进 NWs 的生长提供了一种简单、直接和绿色的方法，并且在催化、表面改性和增材制造等各个领域具有前所未有的潜力。