Advancing the development of novel materials or architectures for random access memories, coupled with an in-depth understanding of their intrinsic conduction mechanisms, holds the potential to transcend the conventional von Neumann bottleneck. In this work, a novel memristor based on the Sb₂(S,Se)₃ material with an alloy of S and Se was fabricated. A systematic investigation of the correlation between the Se/(S + Se) ratio and memristive performance revealed that Ag/Sb₂(S,Se)₃/FTO memristive behavior is uniquely associated with the formation and disruption of anion vacancies and silver filaments. The resultant Ag/Sb₂(S,Se)₃/FTO memristor devices demonstrated good resistive switching, with durability surpassing 3 × 10⁴ cycles, showcasing multilevel conductivity states. Furthermore, these devices successfully emulated the synaptic functionality. This research has established the foundation for the intrinsic conduction mechanisms of antimony chalcogenide memristor artificial synapses.

中文翻译：

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探索基于 Sb2（S，Se）3 的忆阻器在非易失性存储器和神经形态应用中的导电动力学


推进随机存取存储器的新型材料或架构的开发，再加上对其内在传导机制的深入了解，有可能超越传统的冯·诺依曼瓶颈。在这项工作中，制造了一种基于 Sb₂（S，Se）₃ 材料的新型忆阻器，具有 S 和 Se 合金。对 Se/（S + Se） 比值与忆阻性能之间相关性的系统调查表明，Ag/Sb₂（S，Se）₃/FTO 忆阻行为与阴离子空位和银丝的形成和破坏具有独特相关性。所得的 Ag/Sb₂（S，Se）₃/FTO 忆阻器器件表现出良好的电阻开关，耐用性超过 3 × 10⁴ 次循环，展示了多级电导率状态。此外，这些设备成功地模拟了突触功能。这项研究为锑硫属化物忆阻器人工突触的内在传导机制奠定了基础。