Enhancing Near‐Room‐Temperature Thermoelectric Performance of n‐Type Mg3(Bi,Sb)2‐Based Materials through Induction Sintering and Mg Evaporation Control,Advanced Functional Materials

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Enhancing Near‐Room‐Temperature Thermoelectric Performance of n‐Type Mg3(Bi,Sb)2‐Based Materials through Induction Sintering and Mg Evaporation Control
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2024-12-20 , DOI: 10.1002/adfm.202416861
Jiawei Yang, Shuang Zhao, Xinyu Liu, Ling Chen, Li‐Ming Wu

n‐type Mg3(Bi,Sb)2 is a newly developed high‐performance thermoelectric material with significant potential for use in next‐generation thermoelectric coolers (TECs) at room temperature. However, its electrical transport properties, sensitive to magnesium content and high vapor pressure, pose challenges for manufacturing. Herein, using the finite element method, it is demonstrated that reducing the effective specific surface area suppresses magnesium evaporation. Increasing the thickness of the Mg3(Bi,Sb)2 pellet (φ = 12.7 mm) from 3 to 10 mm reduces evaporation by approximately 60%. Building on this, an induction sintering technique is employed, which extends sintering time at 1053 K, enabling the successful preparation of n‐type 0.25%‐Te‐doped Mg3(Bi,Sb)2 material. The as‐obtained Mg3.2Bi1.4975Sb0.5Te0.0025 material exhibits a thermoelectric figure of merit (zT) value of approximately 0.83 at room temperature, attributed to a 20‐fold increase in Hall mobility to lattice thermal conductivity ratio. The homemade seven‐pair module of n‐type Mg3(Bi,Sb)2 and commercial p‐type Bi2Te3 achieves a maximum temperature difference of 63.4 K at room temperature, one of the highest reported. These results reaffirm the superior performance of n‐type Mg3(Bi,Sb)2 and propose an economical approach to scalable production.

更新日期：2024-12-20

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