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Physical Vapor Deposition of High-Mobility P-Type Tellurium and Its Applications for Gate-Tunable van der Waals PN Photodiodes
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-12-20 , DOI: 10.1021/acsami.4c14865 Tianyi Huang, Sen Lin, Jingyi Zou, Zexiao Wang, Yibai Zhong, Jingwei Li, Ruixuan Wang, Zhixing Wang, Kevin St. Luce, Rex Kim, Jianzhou Cui, Han Wang, Qing Li, Min Xu, Sheng Shen, Xu Zhang
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-12-20 , DOI: 10.1021/acsami.4c14865 Tianyi Huang, Sen Lin, Jingyi Zou, Zexiao Wang, Yibai Zhong, Jingwei Li, Ruixuan Wang, Zhixing Wang, Kevin St. Luce, Rex Kim, Jianzhou Cui, Han Wang, Qing Li, Min Xu, Sheng Shen, Xu Zhang
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Recently, tellurium has attracted resurgent interest due to its outstanding p-type characteristics and ambient environmental stability. Here, we present a substrate engineering-based physical vapor deposition method to synthesize high-quality Te nanoflakes and achieved a field-effect hole mobility of 1450 cm2/(V s), which is, to the best of our knowledge, the highest among existing synthesized two-dimensional p-type semiconductors. The high mobility of Te enables the fabrication of Te/MoS2 PN diodes with highly gate-tunable characteristics. The Te/MoS2 heterostructure is demonstrated to be used as visible-light photodetectors with a current responsivity up to 630 A/W, which is about 1 order of magnitude higher than one achieved using p-type Si-MoS2 PN photodiodes. The photoresponse of Te/MoS2 heterojunctions also exhibits strong gate tunability due to their ultrathin thickness and unique band alignment. The successful synthesis of high-mobility Te and its integration into Te/MoS2 photodiodes show promise for the development of highly tunable and multifunctional photodetectors.
更新日期：2024-12-20
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