This paper reports the utilization of cost-effective bottom-contact electrodes composed of aluminum (Al) and titanium (Ti) to facilitate efficient electron injection in n-channel organic transistors. The optimized Al/Ti electrode has a low work function of around 4.03 eV, combining the high conductivity of Al with the stable interface of Ti, making it highly suitable for the electrodes of n-channel transistors. Diketopyrrolopyrrole (DPP)-based polymeric semiconductor transistors with Al/Ti electrodes result in a notable enhancement of the n-channel performance while also leading to a significant decrease in the p-channel properties. The transmission-line method (TLM) and low-frequency noise (LFN) techniques are employed to quantitatively evaluate the effects of Al/Ti electrodes on the charge injection of n-channel OFETs. Finally, complementary inverters composed of different electrodes (Au as a p-channel and Al/Ti as an n-channel electrode) are demonstrated. The inverters showed high static and dynamic characteristics such as ideal voltage transfer curves (VTCs) with minimal hysteresis, high gain (∼25), high noise margins (68%), and low static power consumption (19.9 μW).

中文翻译：

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Al/Ti 电极对 n 沟道晶体管和双极互补电路有效电子注入的协同效应


本文报告了使用由铝 （Al） 和钛 （Ti） 组成的经济高效的底部接触电极，以促进在 n 沟道有机晶体管中进行高效电子注入。优化的 Al/Ti 电极具有约 4.03 eV 的低功函数，结合了 Al 的高导电率和 Ti 的稳定界面，使其非常适合 n 沟道晶体管的电极。基于二酮吡咯并吡咯吡咯 （DPP） 的聚合物半导体晶体管具有 Al/Ti 电极，可显著提高 n 沟道性能，同时也导致 p 沟道性能显著降低。采用传输线法 （TLM） 和低频噪声 （LFN） 技术定量评估 Al/Ti 电极对 n 沟道 OTET 电荷注入的影响。最后，演示了由不同电极（Au 作为 p 沟道和 Al/Ti 作为 n 沟道电极）组成的互补逆变器。逆变器表现出高静态和动态特性，例如具有最小滞后的理想电压传输曲线 （VTC）、高增益 （∼25）、高噪声容限 （68%） 和低静态功耗 （19.9 μW）。