This study examines the impact of structural defects, resulting from oxygen vacancies, on the electrical conductivity of thin films of nonstoichiometric titanium oxides across a temperature range of 20 to 290 K. It is demonstrated that vacancies significantly influence the transport properties of such systems, as they markedly alter their electronic properties. The characteristic temperatures and densities of states as a function of the deviation from stoichiometry are estimated based on the variable range models of Mott and Efros–Shklovskii. The temperature dependence of electrical conductivity reveals a crossover regime between the Mott and Efros–Shklovskii regimes. The comprehensive explanation of this result is based on the proposed electrical conductivity interpolation formula, in which the pre-exponential factors depend both on the deviation from stoichiometry and on the exponential dependence of temperature derived by Mansfield. Finally, diagrams are proposed to enable the verification of the obtained results with respect to the microscopic parameters of thin films of the nonstoichiometric titanium oxides.

中文翻译：

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化学计量偏差对氧化钛薄膜输运特性的影响


本研究研究了氧空位导致的结构缺陷在 20 至 290 K 的温度范围内对非化学计量钛氧化物薄膜导电性的影响。结果表明，空位显着影响此类系统的传输特性，因为它们显着改变了它们的电子特性。根据 Mott 和 Efros-Shklovskii 的可变范围模型估计状态的特征温度和密度作为化学计量学偏差的函数。电导率的温度依赖性揭示了 Mott 和 Efros-Shklovskii 模式之间的交叉状态。对这一结果的全面解释是基于提出的电导率插值公式，其中指数前因子既取决于与化学计量的偏差，也取决于 Mansfield 得出的温度的指数依赖性。最后，提出了图表，以便能够验证所获得的结果与非化学计量氧化钛薄膜的微观参数有关。