Many printed electronic applications require strain‐independent electrical properties to ensure deformation‐independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding of the effect of strain on the electrical properties of nano‐networks. Here, novel AC electrical techniques are introduced to fully characterize the effect of strain on the resistance of high‐mobility printed networks, fabricated from of electrochemically exfoliated MoS2 nanosheets. These devices are initially characterized using DC piezoresistance measurements and show good cyclability and a linear strain response, consistent with a low gauge factor of G ≈ 3. However, AC impedance spectroscopy measurements, performed as a function of strain, allow the measurement of the effects of strain on both the nanosheets and the inter‐nanosheet junctions separately. The junction resistance is found to increase linearly with strain, while the nanosheet resistance remains constant. This response is consistent with strain‐induced sliding of the highly‐aligned nanosheets past one another, without any strain being transferred to the sheets themselves. The approach allows for the individual estimation of the contributions of dimensional factors (G ≈ 1.4) and material factors (G ≈ 1.9) to the total gauge factor. This novel technique may provide insights into other piezoresistive systems.

中文翻译：

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使用电阻抗谱分别量化应变对印刷纳米片网络中纳米片和结电阻的影响


许多印刷电子应用需要与应变无关的电气特性，以确保不受变形影响的性能。因此，使用 2D 和其他纳米材料开发打印的柔性器件需要了解应变对纳米网络电性能的影响。在这里，介绍了新颖的交流电学技术，以充分表征应变对高迁移率印刷网络电阻的影响，该网络由电化学剥离的 MoS ₂ 纳米片制成。这些器件最初使用直流压阻测量进行表征，并显示出良好的可循环性和线性应变响应，与 G ≈ 3 的低应变系数一致。然而，作为应变函数进行的交流阻抗谱测量允许分别测量应变对纳米片和纳米片间结的影响。发现结电阻随应变线性增加，而纳米薄片电阻保持不变。这种响应与高度对齐的纳米片在应变诱导下相互滑动一致，而没有任何应变被转移到片材本身。该方法允许单独估计尺寸因子 （G ≈ 1.4） 和材料因子 （G ≈ 1.9） 对总规格因子的贡献。这种新技术可能为其他压阻系统提供见解。