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Photonic Thermal Switch with Positive Differential Emissivity
ACS Photonics ( IF 6.5 ) Pub Date : 2024-12-18 , DOI: 10.1021/acsphotonics.4c01696 Guillaume Boudan, Etienne Eustache, Laurent Divay, Dominique Carisetti, Riccardo Messina, Philippe Ben-Abdallah
ACS Photonics ( IF 6.5 ) Pub Date : 2024-12-18 , DOI: 10.1021/acsphotonics.4c01696 Guillaume Boudan, Etienne Eustache, Laurent Divay, Dominique Carisetti, Riccardo Messina, Philippe Ben-Abdallah
Controlling temperature in solid-state devices is crucial as high temperatures can negatively impact their functionality, efficiency, speed, reliability, and lifespan. One way to manage this is by adjusting their radiative surface emission properties. Metal–insulator transition (MIT) materials, which have a critical temperature (Tc), have been proposed for thermal switches that drastically change their radiative properties around Tc. Typically, MIT materials become less emitting at high temperatures (negative differential emitter). This study introduces a broadband thermal switch with positive differential emitter behavior. Using a genetic algorithm, a composite multilayer structure based on vanadium dioxide (VO2) (an MIT material with a phase transition at Tc = 68 °C) films has been designed. The analysis of local losses within the switch reveals that its behavior is related to the soft metallic behavior of VO2 films in the infrared spectrum beyond Tc, reducing electric field screening. The developed switch emits a heat flux of 59 W m–2 below Tc and about six times more just above this temperature, which is 60% of the blackbody emission.
中文翻译:
具有正差分发射率的光子热开关
控制固态设备中的温度至关重要,因为高温会对其功能、效率、速度、可靠性和使用寿命产生负面影响。管理这种情况的一种方法是调整它们的辐射表面发射属性。具有临界温度 (Tc) 的金属-绝缘体过渡 (MIT) 材料已被提议用于热开关,这些热开关会在 Tc 附近急剧改变其辐射特性。通常,MIT 材料在高温下会变得较少(负差分发射极)。本研究介绍了一种具有正差分发射极行为的宽带热开关。利用遗传算法,设计了一种基于二氧化钒 (VO2) (一种在 Tc = 68 °C 时具有相变的 MIT 材料)薄膜的复合多层结构。对开关内局部损耗的分析表明,其行为与 VO2 薄膜在 Tc 以外的红外光谱中的软金属行为有关,从而减少了电场屏蔽。开发的开关发出的热通量比 Tc 低 59 W m–2,略高于此温度大约是六倍,即黑体发射的 60%。
更新日期:2024-12-19
中文翻译:
具有正差分发射率的光子热开关
控制固态设备中的温度至关重要,因为高温会对其功能、效率、速度、可靠性和使用寿命产生负面影响。管理这种情况的一种方法是调整它们的辐射表面发射属性。具有临界温度 (Tc) 的金属-绝缘体过渡 (MIT) 材料已被提议用于热开关,这些热开关会在 Tc 附近急剧改变其辐射特性。通常,MIT 材料在高温下会变得较少(负差分发射极)。本研究介绍了一种具有正差分发射极行为的宽带热开关。利用遗传算法,设计了一种基于二氧化钒 (VO2) (一种在 Tc = 68 °C 时具有相变的 MIT 材料)薄膜的复合多层结构。对开关内局部损耗的分析表明,其行为与 VO2 薄膜在 Tc 以外的红外光谱中的软金属行为有关,从而减少了电场屏蔽。开发的开关发出的热通量比 Tc 低 59 W m–2,略高于此温度大约是六倍,即黑体发射的 60%。