Featuring the capabilities of self-power, low dark current, and broadband response, photothermoelectric (PTE) detection demonstrates great potential for application in the military and civilian fields. The development of materials with an intrinsically high efficiency for PTE energy conversion and the in-depth study of its thermoelectric properties on the device performance are of great significance. Here, we reported a quasi-one-dimensional (quasi-1D) van der Waals (vdW) TaSe₃ crystal as a promising material candidate for PTE detection. Benefiting from the 1D confined effect for photon and electron transport, the TaSe₃ nanoribbon crystallized along the atomic chain direction demonstrates a size-dependent thermal conductivity and Seebeck coefficient. With the nanoribbon width downscaled from 5.7 μm to 200 nm, the resulting PTE detector reveals a pronouncedly enhanced photoresponsivity by more than 1 order of magnitude, demonstrating an extremely high value of 33 V/W among the best state-of-the-art PTE devices. More importantly, the anisotropic electrical, thermal, and thermoelectric properties in the TaSe₃ crystal contribute to the orientation-related PTE energy conversion, yielding an anisotropic ratio of photoresponsivity as large as 2.5 under 532 nm light illumination. Our study provides experimental evidence of orientation-related giant PTE photodetection in the quasi-1D vdW TaSe₃ crystal, which provides possibilities for the development of future optoelectronic devices.

中文翻译：

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准一维范德华 TaSe3 晶体中与取向相关的巨光热能转换


光电热电 （PTE） 检测具有自供电、低暗电流和宽带响应功能，在军事和民用领域显示出巨大的应用潜力。开发具有本质高效 PTE 能量转换的材料并深入研究其热电性能对器件性能具有重要意义。在这里，我们报道了一种准一维 （quasi-1D） 范德华 （vdW） TaSe₃ 晶体作为 PTE 检测的有前途的候选材料。得益于光子和电子传输的 1D 受限效应，沿原子链方向结晶的 TaSe₃ 纳米带表现出与尺寸相关的热导率和塞贝克系数。随着纳米带宽度从 5.7 μm 缩小到 200 nm，所得的 PTE 检测器显示出显着增强的光响应度超过 1 个数量级，在最先进的 PTE 器件中表现出 33 V/W 的极高值。更重要的是，TaSe₃ 晶体中的各向异性电、热和热电特性有助于与取向相关的 PTE 能量转换，在 532 nm 光照下产生高达 2.5 的光响应度各向异性比。我们的研究为准 1D vdW TaSe₃ 晶体中与取向相关的巨型 PTE 光检测提供了实验证据，为未来光电器件的发展提供了可能性。