The demand for the three-dimensional (3D) integration of electronic components is steadily increasing. Despite substantial processing challenges, the through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D format^1,2. Although monolithic 3D (M3D) integration schemes show promise³, the seamless connection of single-crystalline semiconductors without intervening wafers has yet to be demonstrated. This challenge arises from the inherent difficulty of growing single crystals on amorphous or polycrystalline surfaces after the back-end-of-the-line process at low temperatures to preserve the underlying circuitry. Consequently, a practical growth-based solution for M3D of single crystals remains unknown. Here we present a method for growing single-crystalline channel materials, specifically composed of transition metal dichalcogenides, on amorphous and polycrystalline surfaces at temperatures low enough to preserve the underlying electronic components. Building on this developed technique, we demonstrate the seamless monolithic integration of vertical single-crystalline logic transistor arrays. This accomplishment leads to the development of unprecedented vertical complementary metal oxide semiconductor (CMOS) arrays composed of grown single-crystalline channels. Ultimately, this achievement provides opportunities for M3D integration of various electronic hardware in the form of single crystals.

对电子元件的三维 （3D） 集成的需求正在稳步增长。尽管加工面临巨大挑战，但硅通孔 （TSV） 技术成为以 3D 格式集成单晶器件组件的唯一可行方法^1,2。尽管单片 3D （M3D） 集成方案显示出前景³，但单晶半导体在没有中间晶圆的情况下的无缝连接尚未得到证明。这一挑战源于在低温下进行后端工艺后，在非晶或多晶表面上生长单晶以保留底层电路的固有困难。因此，单晶 M3D 的基于生长的实用解决方案仍然未知。在这里，我们提出了一种在无定形和多晶表面上生长单晶通道材料的方法，特别是由过渡金属硫化物组成的，温度足够低，以保护下面的电子元件。基于这项开发的技术，我们展示了垂直单晶逻辑晶体管阵列的无缝单片集成。这一成就导致了前所未有的垂直互补金属氧化物半导体 （CMOS） 阵列的发展，这些阵列由生长的单晶通道组成。最终，这一成就为以单晶形式对各种电子硬件进行 M3D 集成提供了机会。