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Reduced Graphene Oxide Wrapped SiO2 Nanoparticles: AC and DC Charge Carrier Dynamics
Journal of Alloys and Compounds ( IF 5.8 ) Pub Date : 2024-12-19 , DOI: 10.1016/j.jallcom.2024.178129
D. Surya Bhaskaram, Smhrutisikha Biswal, G. Govindaraj, Rajesh Cheruku

In the present work reduced graphene oxide wrapped SiO2 nanoparticles are prepared using a facile hydrothermal technique. A detailed analysis of the charge transport mechanism in the prepared sample is carried out. The a.c. conductivity measurements are performed in the temperature range of 373 to 553 K. The d.c. conductivity measurement using four probe technique are performed in the temperature range of 15 to 300 K. At higher temperatures, thermally assisted nearest neighbor hopping is the dominant conduction mechanism. At temperatures below 300 K, variable range hopping can be observed with a crossover from Mott’s to Efros-Shklovskii variable range hopping as temperature goes down below 100 K. Various relaxation processes arising due to different dielectric relaxation processes are discussed in detail using modified concurrent multiple Cole-Cole functions. Simultaneous fitting of real and imaginary parts of complex dielectric data is performed based on the proposed model, and a set of dielectric fit parameters as function temperature is obtained. These fit parameters are unique and fit remarkably well with the other representations of complex conductivity, resistivity, and electric modulus data at different temperatures.

中文翻译:


还原氧化石墨烯包裹的 SiO2 纳米颗粒:交流和直流电荷载流子动力学



在本工作中,还原氧化石墨烯包裹的 SiO2 纳米颗粒使用简单的水热技术制备。对制备样品中的电荷传输机制进行了详细分析。交流电导率测量在 373 至 553K 的温度范围内进行。使用四探头技术的直流电导率测量在 15 至 300K 的温度范围内进行。在较高温度下,热辅助最近邻跳跃是主要的传导机制。在低于 300K 的温度下,当温度降至 100K 以下时,从 Mott's 到 Efros-Shklovskii 可变范围跳跃可以观察到可变范围跳跃。使用改进的并发多个 Cole-Cole 函数详细讨论了由于不同的介电弛豫过程而产生的各种弛豫过程。基于所提出的模型,对复电介质数据的实部和虚部进行同步拟合,得到了一组作为函数温度的介电拟合参数。这些拟合参数是独一无二的,并且与不同温度下的复电导率、电阻率和电模量数据的其他表示非常吻合。
更新日期:2024-12-19
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