In perovskite resistive random access memories working with the formation of iodine vacancies conductive channels, I^- ions in perovskite are migrated toward the anode and oxidized to I₂ molecules, which then accumulated at the perovskite/anode interface under the applied positive voltage. However, I₂ molecules are extremely unstable and easy to sublimate outside the devices. Here, a crown ether dibenzo-24-crown-8 (DB24C8) is adopted as the interface layer to eliminate the sublimation of I₂ molecules and stabilize the storage of I₂ inside the devices. Such an iodine management strategy is attributed to the charge transfer complex formed between DB24C8 and I₂, and then form I₃^- and regenerate I^- ions with the reaction of injected electrons under the applied negative voltage. Besides, DB24C8 can also passivate the defect states in the perovskite, which dramatically reduces the high resistance state current. As a result, the optimized device shows a high switching ratio (>10⁴), a long retention time (>10⁴ s), and large endurance cycles (>500). More importantly, it also exhibits excellent reproducibility and stability in ambient conditions.

中文翻译：

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钙钛矿电阻式随机存取存储器中冠醚的碘管理，以提高开关比和长期稳定性


在钙钛矿电阻式随机存取存储器中，钙钛矿中的离子向阳极迁移并氧化成 I₂ 分子，然后在施加的正电压下积累在钙钛矿/阳极界面。然而，I₂ 分子极不稳定，很容易在器件外升华。这里采用冠醚二苯并-24-冠-8 （DB24C8） 作为界面层，以消除 I₂ 分子的升华并稳定 I₂ 在器件内部的储存。这种碘管理策略归因于 DB24C8 和 I₂ 之间形成的电荷转移络合物，然后形成 I₃^- 并在施加的负电压下与注入的电子的反应再生 I^- 离子。此外，DB24C8 还可以钝化钙钛矿中的缺陷态，从而大大降低高电阻状态电流。因此，优化后的器件具有高开关比 （>10⁴）、长保留时间 （>10⁴ s） 和大耐久性循环 （>500）。更重要的是，它还在环境条件下表现出优异的可重复性和稳定性。