Polar topologies show great potentials in memories and other nano‐micro devices. To integrate with silicon conducting circuits, it is vital to understand the dynamic evolution and the transformation of different domain configurations under external stimulus. Here in situ transmission electron microscopy is performed and the electrically controlled creation and annihilation of large‐scale polar flux‐closure array from typical c/a domains in PbTiO3/SrTiO3 bilayers is directly observed. It is found that the transformation is reversible after removal of external electric fields. Increasing external electric fields on (PbTiO3/SrTiO3)5 multilayered films, it is further found that the flux‐closure domains are nucleated and propagated via the steps of first the formation of new c domains and then connection with neighboring c domains. The transition from a/c domains to flux‐closure arrays under electric fields is collaborated with evaluating energy variations by phase‐field simulations in which the electrostatic energy plays an important role. These results demonstrate the polar topologies can be reversibly manipulated by external stimuli, which sheds light on further understanding the dynamics behavior of polar topologies and helps for future nanoelectric applications.

中文翻译：

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通过电场对氧化物铁电体中的极性拓扑结构进行可逆调控


极性拓扑结构在存储器和其他纳米微器件中显示出巨大的潜力。为了与硅导电电路集成，了解不同域构型在外部刺激下的动态演变和转变至关重要。在这里进行原位透射电子显微镜检查，并直接观察到 PbTiO3/SrTiO3 双层中典型 c/a 畴的电控制创建和湮灭大规模极性通量闭合阵列。发现去除外部电场后，变换是可逆的。增加 （PbTiO3/SrTiO3）5 多层膜上的外部电场，进一步发现磁通闭合结构域通过首先形成新的 c 结构域，然后与相邻的 c 结构域连接的步骤成核和传播。在电场下从 a/c 域到磁通闭合阵列的转变与通过相场模拟评估能量变化合作，其中静电能起着重要作用。这些结果表明，极拓扑结构可以被外部刺激可逆地操纵，这为进一步理解极拓扑结构的动力学行为提供了线索，并有助于未来的纳米电应用。