Due to the difference in work function of p+ emitter and n+ emitter, the metallization process required re-doping to achieve ohmic contact between the metal and silicon interfaces. To investigate how the addition of aluminum affects the changes at the silicon interface, moderate etching of the metallized gate line of the solar cell was carried out, and it was found that aluminum promotes the generation of larger metal spikes at the silicon interface. Elemental analysis of different depths of metal spikes was performed, and the amount of aluminum content affected the depth of the spikes, which is related to the fact that aluminum affects the melting point of silver-aluminum alloys. The surface of the aluminum powder was oxidized to different degrees, and it was found that the aluminum oxide on the surface of the aluminum powder affected the silver-aluminum alloying process by inhibiting the reaction between the glass frit and aluminum to improve the fluidity of the aluminum powder and the glass frit. Finally, it was experimentally found that when the content of silver powder was much larger than the content of aluminum and glass frit, it was easier to form metal spines at the silicon interface for silver-aluminum pastes containing partially oxidized aluminum powder on the surface.

中文翻译：

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p+发射极上金属尖峰的机理及铝粉表面改性对硅界面腐蚀的调控


由于 p ⁺ 发射极和 n ⁺ 发射极的功函数不同，金属化过程需要重新掺杂以实现金属和硅界面之间的欧姆接触。为了研究铝的添加如何影响硅界面处的变化，对太阳能电池的金属化栅线进行了适度的刻蚀，发现铝促进了硅界面处更大金属尖峰的产生。对不同深度的金属尖峰进行元素分析，铝含量的量影响尖峰的深度，这与铝影响银铝合金的熔点有关。铝粉表面被不同程度的氧化，发现铝粉表面的氧化铝通过抑制玻璃熔块与铝的反应，提高铝粉与玻璃熔块的流动性，影响银-铝合金化过程。最后，实验发现，当银粉含量远大于铝和玻璃熔块含量时，表面含有部分氧化铝粉的银铝浆更容易在硅界面处形成金属刺。