Cu₃SbS₄ is commonly used as a hole transport layer in heterojunction devices due to its high valence vacancy, which provides a large number of carriers. The preparation of Cu₃SbS₄ by large-scale dry chemistry is often accompanied by the generation of other copper antimony sulfide ternary phases during the heating process. By exploiting phase transitions in the crystal structure, the synthesis of nanophases can be controlled to improve the properties of the material. Different choices of the main material structure can trigger the evolution of the internal structure of the product material. In the experiment, the fusion of antimony atoms with host Cu₉S₅ crystals will preferentially produce thermally stable Cu₃SbS₄. The stepwise synthesis of Cu₃SbS₄ films from Sb-Cu₉S₅ stacked films was discovered. The influence of reaction temperatures on crystal structure, surface morphology, chemical composition of the films was investigated, and the optical and electrical properties of the films were analyzed during the alloying process. The pure Cu₃SbS₄ was obtained by heating and melting Cu₉S₅ and Sb in a sulphur vapor environment. The Cu₃SbS₄ films obtained at 450 °C have a forbidden bandwidth of 0.89 eV and a charge density of 1.39 × 10²⁰ cm⁻³. These findings provide an explanation for the phase transition and morphological changes during the synthesis of copper antimony sulphide and offer a new thinking strategy for the alloying of synthetic ternary copper-based sulphides.

中文翻译：

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合成具有高电荷密度的热稳定 Cu3SbS4 薄膜：在六方 Cu9S5 密排平面中掺杂 Sb 原子


Cu ₃ SbS ₄ 由于其高价空位，通常用作异质结器件中的空穴传输层，从而提供大量的载流子。通过大规模干化学制备 Cu ₃ SbS ₄ 通常在加热过程中伴随着其他硫化铜锑三相的产生。通过利用晶体结构中的相变，可以控制纳米相的合成以改善材料的性能。主要材料结构的不同选择可以触发产品材料内部结构的演变。在实验中，锑原子与主体 Cu ₉ S ₅ 晶体的融合将优先产生热稳定的 Cu ₃ SbS ₄ 。发现了从 Sb-Cu ₉ S ₅ 堆叠薄膜逐步合成 Cu ₃ SbS ₄ 薄膜的方法。研究了反应温度对薄膜晶体结构、表面形貌、化学成分的影响，并分析了合金化过程中薄膜的光学和电学性能。Cu ₃ S ₅ 和 Sb 在硫蒸气环境中加热熔融 ₉ 得到纯 Cu SbS ₄ 。在 450 °C 下获得的 Cu ₃ SbS ₄ 薄膜具有 0.89 eV 的禁止带宽和 1.39 × 10 ²⁰ cm ⁻³ 的电荷密度。这些发现为硫化铜锑合成过程中的相变和形貌变化提供了解释，并为合成三元铜基硫化物的合金化提供了新的思路。