When two BN layers are stacked in parallel in an AB or BA arrangement, a spontaneous out-of-plane electric polarization arises due to charge transfer in the out-of-plane B–N bonds. The ferroelectric switching from AB to BA (or BA to AB) can be achieved with a relatively small out-of-plane electric field through the in-plane sliding of one atomic layer over the other. However, the optical detection of such ferroelectric switching in hBN has not yet been demonstrated. In this study, we utilize an adjacent WSe₂ monolayer to detect the ferroelectric switching in BN. This dynamic coupling between a two-dimensional (2D) ferroelectric and a 2D semiconductor allows for the fundamental investigation of the ferroelectric material using a nondestructive, local optical probe, offering promising applications for compact and nonvolatile memory devices.

中文翻译：

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使用 WSe2 单层对 hBN 中的滑动铁电开关进行光学检测


当两个 BN 层以 AB 或 BA 排列并联堆叠时，由于面外 B-N 键中的电荷转移，会产生自发的面外电极化。从一个原子层在另一个原子层上的面内滑动，可以用相对较小的面外电场实现从 AB 到 BA（或 BA 到 AB）的铁电切换。然而，在 hBN 中对这种铁电开关的光学检测尚未得到证明。在这项研究中，我们利用相邻的 WSe₂ 单层来检测 BN 中的铁电开关。二维 （2D） 铁电体和 2D 半导体之间的这种动态耦合允许使用无损局部光学探针对铁电材料进行基本研究，为紧凑型和非易失性存储器件提供了前景广阔的应用。