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Improved Model for Accurate Prediction of Crosstalk-Induced Gate-Source Voltage Peaks of SiC MOSFET with SiC Schottky Diode in a Half-bridge Configuration
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 4.6 ) Pub Date : 2024-12-16 , DOI: 10.1109/jestpe.2024.3518570 Manish Mandal, Shamibrota K. Roy, Kaushik Basu
中文翻译：
半桥配置中采用 SiC 肖特基二极管的 SiC MOSFET 串扰感应栅源电压峰值的改进模型
更新日期：2024-12-16
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 4.6 ) Pub Date : 2024-12-16 , DOI: 10.1109/jestpe.2024.3518570 Manish Mandal, Shamibrota K. Roy, Kaushik Basu
中文翻译：
半桥配置中采用 SiC 肖特基二极管的 SiC MOSFET 串扰感应栅源电压峰值的改进模型
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