Magnetoresistance (MR) oscillations serve as a hallmark of intrinsic quantum behavior, traditionally observed only in conducting systems. Here we report the discovery of MR oscillations in an insulating system, the vertical junctions of CrPS4 which is a two-dimensional A-type antiferromagnetic semiconductor. Systematic investigations of MR peaks under varying conditions, including electrode materials, magnetic field direction, temperature, voltage bias, and layer number, elucidate a correlation between MR oscillations and spin-canted states in CrPS4. Experimental data and analysis point out the important role of the in-gap electronic states in generating MR oscillations, and we propose that spin selected interlayer hopping of localized defect states may be responsible for it. Our findings not only illuminate the unusual electronic transport in CrPS4 but also underscore the potential of van der Waals magnets for exploring interesting phenomena. Published by the American Physical Society 2024

中文翻译：

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二维反铁磁半导体 CrPS4 垂直结中的磁阻振荡


磁阻 （MR） 振荡是本征量子行为的标志，传统上只能在导电系统中观察到。在这里，我们报告了在绝缘系统中发现的 MR 振荡，即二维 A 型反铁磁半导体 CrPS4 的垂直结点。对不同条件下的 MR 峰的系统研究，包括电极材料、磁场方向、温度、电压偏置和层数，阐明了 MR 振荡与 CrPS4 中自旋倾斜状态之间的相关性。实验数据和分析指出了间隙内电子状态在产生 MR 振荡中的重要作用，我们提出局部缺陷状态的自旋选择层间跳跃可能是造成这种情况的原因。我们的发现不仅阐明了 CrPS4 中不寻常的电子传输，还强调了范德华磁体探索有趣现象的潜力。 美国物理学会 2024 年出版