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Fundamentals and applications of the skyrmion Hall effect
Applied Physics Reviews ( IF 11.9 ) Pub Date : 2024-12-13 , DOI: 10.1063/5.0218280
Sheng Yang, Yuelei Zhao, Xichao Zhang, Xiangjun Xing, Haifeng Du, Xiaoguang Li, Masahito Mochizuki, Xiaohong Xu, Johan Åkerman, Yan Zhou

Magnetic skyrmions are promising for future spintronic devices due to their nanoscale size, high thermal stability, and mobility at low current densities. However, their practical applications may be limited by the skyrmion Hall effect (SkHE), which causes skyrmions to deflect from the direction of the driving current. The SkHE usually results in annihilation of skyrmions due to the destructive skyrmion–boundary interactions. In this review, we provide a comprehensive overview of the fundamentals of the SkHE as well as the recent advances in manipulation and suppression of the SkHE in various types of magnetic materials. Additionally, we introduce some SkHE-free topological spin textures, such as skyrmioniums and hopfions. This review covers the following aspects: origin of the SkHE and its implications on spintronics, manipulation of the SkHE by external magnetic fields and geometrical engineering, and properties of SkHE-free spin textures. The review concludes by highlighting future research directions and challenges, suggesting that magnetic skyrmions and related topological spin textures will be essential for upcoming electronic and spintronic applications.

中文翻译:


斯格明子霍尔效应的基本原理和应用



磁性斯格明子因其纳米级尺寸、高热稳定性和低电流密度下的迁移率而有望应用于未来的自旋电子学器件。然而,它们的实际应用可能会受到斯格明子霍尔效应 (SkHE) 的限制,斯格明子会从驱动电流的方向偏转。由于破坏性的斯格明子-边界相互作用,SkHE 通常会导致斯格明子湮灭。在这篇综述中,我们全面概述了 SkHE 的基本原理,以及在各种类型磁性材料中操纵和抑制 SkHE 的最新进展。此外,我们还介绍了一些不含 SkHE 的拓扑自旋纹理,例如 skyrmionium 和 hopfions。本文涵盖以下几个方面:SkHE 的起源及其对自旋电子学的影响、外部磁场和几何工程对 SkHE 的操纵,以及无 SkHE 自旋纹理的特性。综述最后强调了未来的研究方向和挑战,表明磁性斯格明子和相关拓扑自旋纹理对于即将到来的电子和自旋电子学应用至关重要。
更新日期:2024-12-13
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