The large capacitance and high induced-carrier density modulation of ionic gate dielectrics have resulted in their substantial integration into diverse electronic device applications with different classes of semiconductors. However, despite the versatile control of induced carrier density in metal halide perovskite semiconductors, limited chemical stability has restricted their consideration for solution-processed ionic-gated transistors (IGTs). In this work, we demonstrate the engineering of solvents, solution-processed ionic polymer dielectric, and perovskite-conjugated polymer semiconductor blends for high-performance and low-voltage orthogonally engineered IGTs. By selecting a suitable orthogonal solvent for the solution-processed ionic polymer dielectric, robust interfacial characteristics were achieved atop the blend-engineered perovskite–polymer semiconductor layer without damage. The fabricated IGTs with an optimized formamidinium lead triiodide (FAPbI₃)-poly(3-hexylthiophene-2,5-diyl) (P3HT) blend showed a high room-temperature hole mobility of >9 cm² V⁻¹ s⁻¹ under ≤− 1.5 V operation with an on/off ratio of >10³, high reproducibility, and excellent operational stability under ambient conditions. This novel hybrid perovskite IGTs with unique ionic gate dielectric could be a testbed for developing flexible and deformable perovskite-based transistors, physiological sensing devices, and related electronics.

中文翻译：

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通过使用共轭聚合物进行多组分工程，将卤化物钙钛矿直接集成到离子门控晶体管中


离子栅电介质的大电容和高感应载流子密度调制使其能够大量集成到具有不同类别半导体的各种电子设备应用中。然而，尽管金属氢化物钙钛矿半导体中感应载流子密度的控制具有多种功能，但有限的化学稳定性限制了它们对溶液处理离子门控晶体管 （IGT） 的考虑。在这项工作中，我们展示了用于高性能和低压正交工程 IGT 的溶剂、溶液处理离子聚合物电介质和钙钛矿共轭聚合物半导体混合物的工程设计。通过为溶液处理的离子聚合物电介质选择合适的正交溶剂，在共混工程钙钛矿-聚合物半导体层上实现了稳健的界面特性，而不会造成损伤。使用优化的甲脒三碘化铅 （FAPbI₃）-聚（3-己基噻吩-2,5-二基）（P3HT）混合物制备的 IGT 在 ≤− 1.5 V 操作下显示出 >9 cm^{2 V-1 s-1} 的高室温空穴迁移率，开/关比为 >10³，高重现性和出色的运行稳定性在环境条件下。这种具有独特离子栅极电介质的新型混合钙钛矿 IGT 可以成为开发柔性和可变形钙钛矿基晶体管、生理传感器件和相关电子产品的试验台。