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Origin of ion bombardment induced Tb oxidation in Tb/Co multilayers
Applied Surface Science ( IF 6.3 ) Pub Date : 2024-12-12 , DOI: 10.1016/j.apsusc.2024.162090 D. Kiphart, M. Krupiński, M. Mitura-Nowak, P.P. Michałowski, M. Kowacz, M. Schmidt, F. Stobiecki, G.D. Chaves-O’Flynn, P. Kuświk
Applied Surface Science ( IF 6.3 ) Pub Date : 2024-12-12 , DOI: 10.1016/j.apsusc.2024.162090 D. Kiphart, M. Krupiński, M. Mitura-Nowak, P.P. Michałowski, M. Kowacz, M. Schmidt, F. Stobiecki, G.D. Chaves-O’Flynn, P. Kuświk
Ion bombardment is currently an active area of research for patterning rare earth/transition metal ferrimagnetic thin films because the magnetic properties are extremely sensitive to changes in the constituent sublattices. It has previously been shown that ion bombardment can be used to deliberately reduce the contribution of the rare earth sublattice in rare earth/transition metal ferrimagnets by selective oxidation. However, the exact mechanism by which oxidation occurs remains an outstanding question. We show that the defects introduced by ion bombardment of Tb/Co multilayers using different ion species with projected range (i.e., 10 keV He+, 15 keV O+, and 30 keV Ga+) create easy diffusion paths for oxygen to penetrate the system. The choice of ion species and fluence enables the effective composition of the films to be tailored by reducing the amount of magnetically-active Tb.
中文翻译:
离子轰击诱导 Tb/Co 多层膜中 Tb 氧化的起源
离子轰击是目前稀土/过渡金属亚铁磁性薄膜图案化的一个活跃研究领域,因为磁性对组成亚晶格的变化极为敏感。先前已经表明,离子轰击可用于通过选择性氧化故意减少稀土/过渡金属铁磁体中稀土亚晶格的贡献。然而,氧化发生的确切机制仍然是一个悬而未决的问题。我们表明,使用投影范围不同的离子种类(即 10 keV He + 、15 keV O + 和 30 keV Ga + )对 Tb/Co 多层膜进行离子轰击引入的缺陷为氧渗透系统创造了简单的扩散路径。离子种类和通量的选择可以通过减少磁性活性 Tb 的量来定制薄膜的有效组成。
更新日期:2024-12-17
中文翻译:
离子轰击诱导 Tb/Co 多层膜中 Tb 氧化的起源
离子轰击是目前稀土/过渡金属亚铁磁性薄膜图案化的一个活跃研究领域,因为磁性对组成亚晶格的变化极为敏感。先前已经表明,离子轰击可用于通过选择性氧化故意减少稀土/过渡金属铁磁体中稀土亚晶格的贡献。然而,氧化发生的确切机制仍然是一个悬而未决的问题。我们表明,使用投影范围不同的离子种类(即 10 keV He + 、15 keV O + 和 30 keV Ga + )对 Tb/Co 多层膜进行离子轰击引入的缺陷为氧渗透系统创造了简单的扩散路径。离子种类和通量的选择可以通过减少磁性活性 Tb 的量来定制薄膜的有效组成。