At present, the global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) solar cell technology, and silicon heterojunction solar (SHJ) cells have been developed rapidly after the concept was proposed, which is one of the most promising technologies for the next generation of passivating contact solar cells, using a c-Si substrate and two amorphous silicon (a-Si) substrates with selective exposure of opposite polarity. SHJ solar cells not only have the advantages of high conversion efficiency and high open-circuit voltage, but also have a low temperature coefficient and free from potential induced degradation (PID). For SHJ solar cells, the passivation contact effect of the c-Si interface is the core of the entire cell manufacturing process. To approach the single-junction Shockley-Queisser limit, it is necessary to passivate monocrystalline silicon well to reduce the efficiency loss caused by recombination. Recently, the successful development of silicon heterojunction technology has significantly increased the power conversion efficiency (PCE) of crystalline silicon solar cells to 27.30%. This review firstly summarizes the development history and current situation of high efficiency c-Si heterojunction solar cells, and the main physical mechanisms affecting the performance of SHJ are analyzed. Subsequently, an overview is provided on the selection and application of passivation contact layer materials, with particular emphasis on distinguishing between various types of passivation materials and their respective roles in facilitating selective carrier transportation. Then, other components of SHJ solar cells are reviewed, including the selection and application of transparent conductive electrode materials that can reduce or replace indium element use. The application of copper plating technology and laser transfer printing (LTP) technology in the industrial development of SHJ solar cell technology is discussed. Finally, the development status of SHJ-based tandem solar cells is discussed, and also the prospects, challenges, as well as potential solutions for industrial development of SHJ are outlooked.

中文翻译：

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晶体硅异质结太阳能电池的研究进展


目前，全球光伏 （PV） 市场以晶体硅 （c-Si） 太阳能电池技术为主，硅异质结太阳能 （SHJ） 电池在该概念提出后得到了迅速发展，这是下一代钝化接触太阳能电池最有前途的技术之一，使用 c-Si 衬底和两个非晶硅 （a-Si） 衬底，选择性暴露相反极性。SHJ 太阳能电池不仅具有高转换效率和高开路电压等优点，而且具有低温度系数和无电位感应衰减 （PID） 的优点。对于 SHJ 太阳能电池来说，c-Si 界面的钝化接触效应是整个电池制造过程的核心。为了接近单结 Shockley-Queisser 极限，需要对单晶硅进行良好的钝化，以减少复合引起的效率损失。近年来，硅异质结技术的成功开发使晶体硅太阳能电池的功率转换效率 （PCE） 显著提高至 27.30%。本文首先总结了高效 c-Si 异质结太阳能电池的发展历史和现状，并分析了影响 SHJ 性能的主要物理机制。随后，概述了钝化接触层材料的选择和应用，特别强调了区分各种类型的钝化材料及其在促进选择性载体运输中各自的作用。然后，综述了 SHJ 太阳能电池的其他组成部分，包括可以减少或替代铟元素使用的透明导电电极材料的选择和应用。 讨论了镀铜技术和激光转移印刷 （LTP） 技术在 SHJ 太阳能电池技术工业发展中的应用。最后，讨论了 SHJ 基叠层太阳能电池的发展现状，并展望了 SHJ 的产业发展前景、挑战以及潜在的解决方案。