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Blister test to measure the out-of-plane shear modulus of few-layer graphene
Nanoscale ( IF 5.8 ) Pub Date : 2024-12-11 , DOI: 10.1039/d4nr04214j
Metehan Calis, Narasimha Boddeti, J. Scott Bunch

We measure the out-of-plane shear modulus of few-layer graphene (FLG) by a blister test. During the test, we employed a monolayer molybdenum disulfide (MoS2) membrane stacked onto FLG wells to facilitate the separation of FLG from the silicon oxide (SiOx) substrate. Using the deflection profile of the blister, we determine an average shear modulus G of 0.97 ± 0.15 GPa, and a free energy model incorporating the interfacial shear force is developed to calculate the adhesion energy between FLG and SiOx substrate. The experimental protocol can be extended to other two-dimensional (2D) materials and layered structures (LS) made from other materials (WS2, hBN, etc.) to characterize their interlayer interactions. These results provide valuable insight into the mechanics of 2D nano devices which is important in designing more complex flexible electronic devices and nanoelectromechanical systems.

中文翻译:


用于测量几层石墨烯的面外剪切模量的起泡测试



我们通过起泡测试测量几层石墨烯 (FLG) 的面外剪切模量。在测试过程中,我们采用了堆叠在 FLG 孔上的单层二硫化钼 (MoS2) 膜,以促进 FLG 与氧化硅 (SiOx) 衬底的分离。使用泡罩的挠度曲线,我们确定了 0.97 ± 0.15 GPa 的平均剪切模量 G,并开发了一个包含界面剪切力的自由能模型来计算 FLG 和 SiOx 基材之间的粘附能。实验方案可以扩展到其他二维 (2D) 材料和由其他材料(WS2、hBN )制成的层状结构 (LS),以表征它们的层间相互作用。这些结果为二维纳米器件的力学提供了有价值的见解,这对于设计更复杂的柔性电子器件和纳米机电系统非常重要。
更新日期:2024-12-11
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