CaBi₂Nb₂O₉ is a highly promising candidate for high-temperature piezoelectric devices due to its ultrahigh Curie temperature and excellent insulation properties. However, poor piezoelectric properties remain the primary reason for its limited application. In this work, the improved template grain growth method combined with a Na/Sm co-doping strategy was employed to enhance the piezoelectric properties of CaBi₂Nb₂O₉ ceramics. And the Na/Sm co-doped CaBi₂Nb₂O₉ textured ceramics with a high texture degree of 95–98% were successfully prepared, achieving the highest piezoelectric coefficient (d₃₃ > 30 pC N⁻¹) in the CaBi₂Nb₂O₉ ceramic systems, while maintaining a high DC electrical resistivity (>10⁷ Ω cm until 500 °C) as well as a high Curie temperature (T_C ∼ 950 °C). The dramatic improvement in d₃₃ is attributed to the great increase in remnant polarization, benefitting from the highly oriented arrangement of grains and the evolution of nanodomain configurations. This work achieves a breakthrough in the piezoelectric properties of CaBi₂Nb₂O₉-based ceramics and offers potential for their practical applications.

中文翻译：

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压电性超过 30 pC N-1，居里温度高达 950 °C，在纹理强烈的 CaBi2Nb2O9 陶瓷中


CaBi ₂ Nb ₂ O ₉ 由于其超高的居里温度和优异的绝缘性能，是高温压电器件非常有前途的候选者。然而，较差的压电性能仍然是其应用受限的主要原因。在本工作中，采用改进的模板晶粒生长方法结合 Na/Sm 共掺杂策略来增强 CaBi ₂ Nb ₂ O ₉ 陶瓷的压电性能。成功制备了具有 95-98% 高织构度的 Na/Sm 共掺杂 CaBi Nb ₂ O ₉ 织构陶瓷，在 CaBi ₂ Nb ₂ O ₉ 陶瓷系统中实现了最高的压电系数 （d ₃₃ > 30 pC N ⁻¹ ），同时保持了较高的直流电阻率（>10 ⁷ Ω cm 至 500 °C）以及较高的居里温度 （T _C ∼ 950 ° ₂ C）。d ₃₃ 的显着改善归因于残余极化的大幅增加，这得益于晶粒的高度定向排列和纳米域构型的演变。这项工作突破了 CaBi ₂ Nb ₂ O ₉ 基陶瓷的压电性能，为其实际应用提供了潜力。