Manganese-doped 0.5Ba(Zr_0.2Ti_0.8)O₃–0.5(Ba_0.7Ca_0.3)TiO₃ (BZT–BCT) ferroelectric thin films deposited on platinized sapphire substrates by chemical solution deposition and multistep-annealed at 850 °C, are investigated. The 100 nm and 340 nm thick films are crack-free and have columnar microstructures with average lateral grain sizes of 58 nm and 92 nm, respectively. The 340 nm thick films exhibit a relative permittivity of about 820 at 1 kHz and room temperature, about 60% higher than the thinner films, which is attributed to the dielectric grain size effect. The thinner films exhibit a larger coercive field and remanent polarization of about 110 kV cm⁻¹ and 6 μC cm⁻² respectively, at 1 MV cm⁻¹ compared to 45 kV cm⁻¹ and 4 μC cm⁻² for the thicker films. The 340 nm thick films exhibit a maximum polarization of about 47 μC cm⁻² at 3.5 MV cm⁻¹ and slim polarization loops, resulting in high energy storage properties with 46 J cm⁻³ of recoverable energy storage density and 89% energy storage efficiency.

中文翻译：

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在镀铂蓝宝石衬底上实现 0.5Ba（Zr0.2Ti0.8）O3–0.5（Ba0.7Ca0.3）TiO3 薄膜的高储能密度和效率


研究了掺锰的 0.5Ba（Zr_0.2Ti_0.8）O₃–0.5（Ba_0.7Ca_0.3）TiO₃ （BZT–BCT） 铁电薄膜通过化学溶液沉积沉积在镀铂蓝宝石衬底上，并在 850 °C 下进行多级退火。100 nm 和 340 nm 厚的薄膜无裂纹，具有柱状微观结构，平均横向晶粒尺寸分别为 58 nm 和 92 nm。340 nm 厚的薄膜在 1 kHz 和室温下的相对介电常数约为 820，比较薄的薄膜高约 60%，这归因于介电晶粒尺寸效应。较薄的薄膜在 1 MV ^cm-1 处表现出更大的矫顽力场和约 6 μC ^cm-2 的剩余极化，分别为约 110 kV ^cm-1 和 6 μC cm-2，而较厚的薄膜则为 45 kV ^cm-1 和 4 μC ^cm-2。340 nm 厚薄膜在 3.5 MV ^cm-1 处表现出约 47 μC ^cm-2 的最大极化和细长的极化环，从而具有高储能特性，具有 46 J ^cm-3 的可恢复储能密度和 89% 的储能效率。