Metal oxide semiconductor (MOS)-based hydrogen (H₂) sensor that can work at room or near room temperature has attracted an increasing concern owing to its potential application in hydrogen storage and utilization. Herein, a co-sensitization strategy by La doping and Pd decoration is proposed to realize the detection of H₂ at near room temperature (50 °C) on In₂O₃ porous nanotubes (PNTs). The In₂O₃ PNTs were prepared via a solvothermal method and then sequentially doped with La³⁺ and decorated with Pd nanoparticles via an immersion, freeze-drying and calcination route and a chemical reduction method, respectively. The results of gas-sensing measurements indicated that after a compositional evolution from In₂O₃ to La-doped In₂O₃ (La-In₂O₃) and Pd-decorated La-In₂O₃ (Pd/La-In₂O₃), the fabricated H₂ sensor showed a higher sensitivity at lower operating temperature. At a near room temperature of 50 °C, the response of the best Pd/La-In₂O₃ sensor to 50 ppm H₂ was as high as 8.34, increasing about 4.85, 1.20 and 1.15 folds compared to the In₂O₃ (1.72 at 160 °C), La-In₂O₃ (6.97 at 150 °C) and Pd/In₂O₃ (7.24 at 80 °C) sensors, respectively. The sensitization effects and mechanism of La dopant and Pd modifier as well as their synergistic effects were discussed in detail.

中文翻译：

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在接近室温下，通过与 La-doitant和 Pd -改性剂共敏化的多孔 In2O3 纳米管对 H2 进行化学电阻检测


基于金属氧化物半导体 （MOS） 的氢气 （H₂） 传感器可以在室温或接近室温下工作，由于其在氢气储存和利用方面的潜在应用而受到越来越多的关注。在此，提出了一种通过 La 掺杂和 Pd 修饰的共敏化策略，以实现在接近室温 （50 °C） 下对 In₂O₃ 多孔纳米管 （PNT） 上 H₂ 的检测。通过溶剂热法制备 In₂O₃ PNT，然后依次掺杂 La³⁺ 并分别通过浸泡、冷冻干燥和煅烧路线和化学还原法用 Pd 纳米颗粒装饰。气体传感测量结果表明，在从 In₂O₃ 成分演变为 La-doped In₂O₃ （La-In₂O₃） 和 Pd 修饰的 La-In₂O₃ （Pd/La-In₂O₃） 后，制造的 H₂ 传感器在较低工作温度下表现出更高的灵敏度。在接近室温 50 °C 的温度下，最佳 Pd/La-In₂O₃ 传感器对 50 ppm H₂ 的响应高达 8.34，与 In₂O₃（160 °C 时为 1.72）、La-In₂O₃（150 °C 时为 6.97）和 Pd/In₂O₃（80 °C 时为 7.24）传感器相比，分别增加了约 4.85、1.20 和 1.15 倍。 分别。详细讨论了 La 掺杂剂和 Pd 改性剂的敏化作用和作用机理，以及它们的协同作用。