In semiconductor integrated circuits, high-purity tantalum is used as a sputtering target to obtain film in order to prevent Cu atoms from diffusing into the Si storage unit. The performance of tantalum target depends on grains size and random texture, which could be affected by the preparation process. Therefore, understanding the deformation behavior of different orientations helps in controlling the microstructure of the tantalum target. Electron Backscattered Diffraction (EBSD) and crystallographic calculations were used to study the deformation behavior of high-purity tantalum through 135° clock rolling, especially the metastable {112} orientation. The results show that lower strain rate (60 %) leads to stress concentration, causing an uneven distribution of geometrically necessary dislocation density. The splitting behavior of {112} oriented grains is similar with that of {111} at lower strain rates, and the {001} oriented grains are relatively stable. In addition, the increased strain rate (90 %) promotes the splitting of {001} oriented grains in the 1/4 layer and center layer regions. The {112} and {111} oriented grains of surface shift from soft to hard orientation and are more susceptible to multislip, resulting in more uniform deformation. According to the schmid factor analysis, the {112} and {111} orientations are more likely to activate the slip system during deformation, while the {001} orientation is relatively more difficult. However, the GND densities of {112} and {111} orientations and their intracrystalline misorientation are higher than those of {001} orientation, which contradicts the SF calculations. After introducing schmid factor different rate calculations, the results show that the SFDR values of {112} and {111} orientations are larger than that of {001} orientation, which may lead to the activation of monoclinic slip, which triggers the plugging of dislocations, and consequently, enhances the GND densities and intracrystalline misorientation of {112} and {111} orientations.

中文翻译：

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{112}亚稳取向晶粒对高纯钽变形行为的影响


在半导体集成电路中，高纯度钽用作溅射靶材以获得薄膜，以防止 Cu 原子扩散到 Si 存储单元中。钽靶材的性能取决于颗粒大小和随机质地，这可能会受到制备过程的影响。因此，了解不同取向的变形行为有助于控制钽靶材的微观结构。电子背散射衍射 （EBSD） 和晶体学计算用于研究高纯钽在 135° 时钟滚动过程中的变形行为，尤其是亚稳态{112}取向。结果表明，较低的应变率 （60%） 导致应力集中，导致几何必要的位错密度分布不均匀。{112}取向晶粒的分裂行为与{111}在较低应变速率下的劈裂行为相似，{001}取向晶粒相对稳定。此外，应变率的增加 （90%） 促进了 1/4 层和中心层区域中{001}取向晶粒的分裂。{112} 和 {111} 取向的表面晶粒从软方向转变为硬晶状体，并且更容易受到多滑的影响，从而导致更均匀的变形。根据 schmid 因子分析，{112} 和 {111} 方向在变形过程中更有可能激活滑移系统，而 {001} 方向相对困难。然而，{112} 和 {111} 取向的 GND 密度及其晶内取向差高于 {001} 取向的 GND 密度，这与 SF 计算相矛盾。 引入施密德因子不同速率计算后，结果表明，{112}和{111}取向的SFDR值大于{001}取向的SFDR值，这可能导致单斜滑移的激活，从而触发位错的堵塞，从而增强GND密度和{112}和{111}取向的晶内取向差。