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Mid‐Infrared on‐Chip Soliton Self‐frequency Shift in Chalcogenide Glass Waveguide
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2024-12-09 , DOI: 10.1002/lpor.202401435 Lei Yang, Zibo Wei, Kai Xia, Zhen Yang, Haoxian Wang, Peilong Yang, Wei Zhang, Rongping Wang, Shixun Dai, Fuwan Gan, Zhe Kang, Peipeng Xu
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2024-12-09 , DOI: 10.1002/lpor.202401435 Lei Yang, Zibo Wei, Kai Xia, Zhen Yang, Haoxian Wang, Peilong Yang, Wei Zhang, Rongping Wang, Shixun Dai, Fuwan Gan, Zhe Kang, Peipeng Xu
Mid‐infrared soliton lasers leveraging the Raman self‐pumping induced soliton self‐frequency shift (SSFS) effect offer continuously tunable, highly efficient, femtosecond coherent sources that are essential for applications such as spectroscopy, metrology, and quantum optics. However, despite significant advancements in fluoride and chalcogenide fiber platforms, realizing mid‐infrared Raman soliton lasers on on‐chip platforms remains challenging. In this study, the first experimental demonstration of a mid‐infrared Raman soliton laser in an on‐chip Ge28 Sb12 Se60 (GeSbSe) chalcogenide glass waveguide is presented. A fully fiberized femtosecond fiber laser, centered at 1.96 µm and emitting 246 fs pulses at a 50 MHz repetition rate, is utilized as the pump source, establishing a fiber‐to‐chip configuration. The waveguides are meticulously fabricated using e‐beam lithography and plasma etching, achieving high optical quality and precision in the mid‐infrared regime. Through precise geometrical dispersion engineering, a Raman soliton laser is achieved that continuously tunes from 1960 to 2145 nm within a 32.5 mm long snakelike GeSbSe strip waveguide. The threshold for pump peak power is remarkably low, at just 14.1 W (3.47 pJ). Additionally, a more than one‐octave‐spanning near to mid‐infrared supercontinuum (1320–2760 nm at 22.9 pJ), reinforced by the combined Kerr and Raman effects, is also realized, confirming the versatile performance of the proposed GeSbSe waveguide. These findings pave the way for mid‐infrared on‐chip Raman soliton lasers, highlighting their potential for power‐efficient, low‐cost, and field‐deployable on‐chip applications in the mid‐infrared regime.
中文翻译:
硫系化物玻璃波导中的中红外片上孤子自频移
利用拉曼自泵浦感应孤子自频移 (SSFS) 效应的中红外孤子激光器可提供连续可调谐、高效的飞秒相干光源,这对于光谱学、计量学和量子光学等应用至关重要。然而,尽管氟化物和硫系化物光纤平台取得了重大进步,但在片上平台上实现中红外拉曼孤子激光器仍然具有挑战性。在本研究中,首次展示了中红外拉曼孤子激光器在片上 Ge28Sb12Se60 (GeSbSe) 硫属化物玻璃波导中的实验演示。以 1.96 μm 为中心并以 50 MHz 重复频率发射 246 fs 脉冲的全光纤飞秒光纤激光器用作泵浦源,建立了光纤到芯片的配置。波导采用电子束光刻和等离子体蚀刻精心制造,在中红外范围内实现了高光学质量和精度。通过精确的几何色散工程,实现了拉曼孤子激光器,该激光器在 32.5 mm 长的蛇状 GeSbSe 带状波导中从 1960 nm 连续调谐到 2145 nm。泵浦峰值功率的阈值非常低,仅为 14.1 W (3.47 pJ)。此外,还实现了一个超过一个倍频程跨度的近红外到中红外超连续谱(1320-2760 nm,22.9 pJ),并通过克尔和拉曼效应的组合得到增强,证实了所提出的 GeSbSe 波导的多功能性能。这些发现为中红外片上拉曼孤子激光器铺平了道路,突出了它们在中红外领域中低功耗、低成本和可现场部署的片上应用的潜力。
更新日期:2024-12-09
中文翻译:
硫系化物玻璃波导中的中红外片上孤子自频移
利用拉曼自泵浦感应孤子自频移 (SSFS) 效应的中红外孤子激光器可提供连续可调谐、高效的飞秒相干光源,这对于光谱学、计量学和量子光学等应用至关重要。然而,尽管氟化物和硫系化物光纤平台取得了重大进步,但在片上平台上实现中红外拉曼孤子激光器仍然具有挑战性。在本研究中,首次展示了中红外拉曼孤子激光器在片上 Ge28Sb12Se60 (GeSbSe) 硫属化物玻璃波导中的实验演示。以 1.96 μm 为中心并以 50 MHz 重复频率发射 246 fs 脉冲的全光纤飞秒光纤激光器用作泵浦源,建立了光纤到芯片的配置。波导采用电子束光刻和等离子体蚀刻精心制造,在中红外范围内实现了高光学质量和精度。通过精确的几何色散工程,实现了拉曼孤子激光器,该激光器在 32.5 mm 长的蛇状 GeSbSe 带状波导中从 1960 nm 连续调谐到 2145 nm。泵浦峰值功率的阈值非常低,仅为 14.1 W (3.47 pJ)。此外,还实现了一个超过一个倍频程跨度的近红外到中红外超连续谱(1320-2760 nm,22.9 pJ),并通过克尔和拉曼效应的组合得到增强,证实了所提出的 GeSbSe 波导的多功能性能。这些发现为中红外片上拉曼孤子激光器铺平了道路,突出了它们在中红外领域中低功耗、低成本和可现场部署的片上应用的潜力。