The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 10⁷ nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field. This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth, sidewall passivation, efficient photon extraction, and elegant bonding technologies, and promises significant advantages for augmented and virtual reality devices, wearables, and next-generation consumer electronics.

中文翻译：

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micro-LED 显示屏的光明未来

基于 GaN 的 Micro-LED 阵列的开发可实现超过 10⁷ 尼特的亮度和高达 1080×780 像素的高密度微型显示器，标志着该领域的真正突破。这一突破是掌握了包括晶圆级高质量外延生长、侧壁钝化、高效光子提取和优雅键合技术在内的长期挑战的结果，并有望为增强现实和虚拟现实设备、可穿戴设备和下一代消费电子产品带来显著优势。